PBHV2160Z: 600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor _ BDTIC 中国领先电子元器件代理商

PBHV2160Z: 600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor

NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.

PNP complement: PBHV3160Z

SOT223

数据手册 (1)

名称/描述	Modified Date
600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor (REV 1.0) PDF (200.0 kB) PBHV2160Z [English]	24 Jun 2015

封装信息 (1)

名称/描述	Modified Date
plastic surface-mounted package with increased heatsink; 4 leads (REV 1.0) PDF (198.0 kB) SOT223 [English]	08 Feb 2016

包装 (1)

名称/描述	Modified Date
Tape reel SMD; standard product orientation 12NC ending 115 (REV 1.0) PDF (189.0 kB) SOT223_115 [English]	07 Nov 2012

支持信息 (2)

名称/描述	Modified Date
Reflow Soldering Profile (REV 1.0) PDF (34.0 kB) REFLOW_SOLDERING_PROFILE [English]	30 Sep 2013
Wave Soldering Profile (REV 1.0) PDF (20.0 kB) WAVE_SOLDERING_PROFILE [English]	30 Sep 2013

订购信息

型号	状态	Package version	Package name	大小 (mm)	Polarity	P_tot [max] (mW)	V_CEO [max] (V)	I_C [max] (A)	V_CEsat [max] (mV)	R_CEsat@I_C [max]; I_C/I_B =10 [typ] (mΩ)	h_FE [min]	f_T [typ] (MHz)
PBHV2160Z	Active	SOT223	SC-73	6.5 x 3.5 x 1.65	NPN	650	600	0.1	125		70

封装环保信息

产品编号	封装说明	Outline Version	回流/波峰焊接	包装	产品状态	部件编号订购码 (12NC)	Marking	化学成分	RoHS / 无铅 / RHF	无铅转换日期	EFR	IFR(FIT)	MTBF（小时）	MSL	MSL LF
PBHV2160Z		SOT223	Reflow_Soldering_Profile Wave_Soldering_Profile Reflow_Soldering_Profile Wave_Soldering_Profile	Reel 7" Q1/T1	Active	PBHV2160ZX (9340 685 93115)	HV216Z	PBHV2160Z		Always Pb-free	153.0	0.71	1.41E9	1	1

600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor PBHV2160Z

plastic surface-mounted package with increased heatsink; 4 leads BUK7880-55A

Reflow_Soldering_Profile Wave_Soldering_Profile LPC1112FD20

Reflow_Soldering_Profile Wave_Soldering_Profile LPC1112FD20

Tape reel SMD; standard product orientation 12NC ending 115 BUK7880-55A

BLT81

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