NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
PNP/PNP complement: PBSS5260PAPS
名称/描述 | Modified Date |
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60 V, 2 A NPN/NPN low VCEsat (BISS) double transistor (REV 1.0) PDF (258.0 kB) PBSS4260PANS [English] | 15 Dec 2015 |
名称/描述 | Modified Date |
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DFN2020D-6: plastic, thermally enhanced ultra thin and small outline package; no leads; 6 terminals; body 2 x 2 x... (REV 1.0) PDF (201.0 kB) SOT1118D [English] | 08 Feb 2016 |
型号 | 状态 | Package version | Package name | 大小 (mm) | transistor polarity | Transistor polarity | Polarity | number of transistors | Ptot [max] (mW) | VCEO [max] (V) | IC [max] (A) | ICM [max] (A) | hFE [min] | VCEsat [max] (NPN) (mV) | hFE [typ] | VCEsat [max] (PNP) (mV) | RCEsat@IC [max]; IC/IB =10 [typ] (mΩ) | fT [min] (MHz) | fT [typ] (MHz) | RCEsat [typ] (mΩ) | RCEsat [max] (mΩ) | VCEsat [max] (mV) |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PBSS4260PANS | Active | SOT1118D | DFN2020D-6 | 2 x 2 x 0.65 | NPN | NPN | 2 | 960 | 60 | 2 | 3 | 250 | 350 | 400 | 200.00000000000001 | 140 | 200 | 350 |
产品编号 | 封装说明 | Outline Version | 回流/波峰焊接 | 包装 | 产品状态 | 部件编号订购码 (12NC) | Marking | 化学成分 | RoHS / 无铅 / RHF | 无铅转换日期 | EFR | IFR(FIT) | MTBF(小时) | MSL | MSL LF |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PBSS4260PANS | SOT1118D | Reel 7" Q1/T1 | Active | PBSS4260PANSX (9340 696 78115) | 3L | Always Pb-free | 153.0 | 0.71 | 1.41E9 | 1 | 1 |