PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
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60 V, 1 A PNP/PNP low VCEsat (BISS) transistor (REV 1.0) PDF (284.0 kB) PBSS5160PAPS [English] | 24 Nov 2014 |
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DFN2020D-6: plastic, thermally enhanced ultra thin and small outline package; no leads; 6 terminals; body 2 x 2 x... (REV 1.0) PDF (201.0 kB) SOT1118D [English] | 08 Feb 2016 |
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PBSS5160PAPS NXP® Product Reliability (REV 1.1) PDF (82.0 kB) PBSS5160PAPS_1 [English] | 31 Jan 2015 |
PBSS5160PAPS NXP Product Quality (REV 1.2) PDF (74.0 kB) PBSS5160PAPS_NXP_PRODUCT_QUALITY [English] | 31 Jan 2015 |
型号 | 状态 | Package version | Package name | 大小 (mm) | transistor polarity | Transistor polarity | Polarity | number of transistors | Ptot [max] (mW) | VCEO [max] (V) | ICM [max] (A) | IC [max] (A) | VCEsat [max] (NPN) (mV) | hFE [typ] | VCEsat [max] (PNP) (mV) | RCEsat@IC [max]; IC/IB =10 [typ] (mΩ) | fT [min] (MHz) | hFE [min] | fT [typ] (MHz) | RCEsat [typ] (mΩ) | RCEsat [max] (mΩ) | VCEsat [max] (mV) |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PBSS5160PAPS | Active | SOT1118D | DFN2020D-6 | 2 x 2 x 0.65 | PNP | PNP | 2 | 2000 | -60 | -1.5 | -1 | 245 | -340 | 359.99999999999999 | 65 | 170 | 125 | 360 | -550 |
产品编号 | 封装说明 | Outline Version | 回流/波峰焊接 | 包装 | 产品状态 | 部件编号订购码 (12NC) | Marking | 化学成分 | RoHS / 无铅 / RHF | 无铅转换日期 | EFR | IFR(FIT) | MTBF(小时) | MSL | MSL LF |
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PBSS5160PAPS | SOT1118D | Reel 7" Q1/T1 | Active | PBSS5160PAPSX (9340 689 41115) | 3C | Always Pb-free | 153.0 | 0.71 | 1.41E9 | 1 | 1 |