PBSS5160PAPS: 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor

PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

sot1118d_3d
数据手册 (1)
名称/描述Modified Date
60 V, 1 A PNP/PNP low VCEsat (BISS) transistor (REV 1.0) PDF (284.0 kB) PBSS5160PAPS [English]24 Nov 2014
封装信息 (1)
名称/描述Modified Date
DFN2020D-6: plastic, thermally enhanced ultra thin and small outline package; no leads; 6 terminals; body 2 x 2 x... (REV 1.0) PDF (201.0 kB) SOT1118D [English]08 Feb 2016
可靠性与质量信息 (2)
名称/描述Modified Date
PBSS5160PAPS NXP® Product Reliability (REV 1.1) PDF (82.0 kB) PBSS5160PAPS_1 [English]31 Jan 2015
PBSS5160PAPS NXP Product Quality (REV 1.2) PDF (74.0 kB) PBSS5160PAPS_NXP_PRODUCT_QUALITY [English]31 Jan 2015
SPICE
订购信息
型号状态Package versionPackage name大小 (mm)transistor polarityTransistor polarityPolaritynumber of transistorsPtot [max] (mW)VCEO [max] (V)ICM [max] (A)IC [max] (A)VCEsat [max] (NPN) (mV)hFE [typ]VCEsat [max] (PNP) (mV)RCEsat@IC [max]; IC/IB =10 [typ] (mΩ)fT [min] (MHz)hFE [min]fT [typ] (MHz)RCEsat [typ] (mΩ)RCEsat [max] (mΩ)VCEsat [max] (mV)
PBSS5160PAPSActiveSOT1118DDFN2020D-62 x 2 x 0.65PNPPNP22000-60-1.5-1245-340359.9999999999999965170125360-550
封装环保信息
产品编号封装说明Outline Version回流/波峰焊接包装产品状态部件编号订购码 (12NC)Marking化学成分RoHS / 无铅 / RHF无铅转换日期EFRIFR(FIT)MTBF(小时)MSLMSL LF
PBSS5160PAPSSOT1118DReel 7" Q1/T1ActivePBSS5160PAPSX (9340 689 41115)3CAlways Pb-free153.00.711.41E911
60 V, 1 A PNP/PNP low VCEsat (BISS) transistor PBSS5160PAPS
PBSS5160PAPS NXP® Product Reliability PBSS5160PAPS
PBSS5160PAPS NXP Product Quality PBSS5160PAPS
PBSS5160PAPS SPICE Model PBSS5160PAPS
DFN2020D-6: plastic, thermally enhanced ultra thin and small outline package; no leads; 6 terminals; body 2 x 2 x... PBSS5260PAPS
DOUBLE_LOW_VCESAT_BISS_TRANSISTORS_IN_DFN2020_6