A2I20H080N: 1800-2200 MHz，13.5 W平均值，30 V Airfast LDMOS宽带集成射频放大器
特性
| TO-270WB-15 and TO-270WBG-15 Package Image |
数据手册 (1)
| 名称/描述 | Modified Date |
|---|---|
| A2I20H080N 1800-2200 MHz, 13.5 W Avg, 30 V Data Sheet (REV 0) PDF (434.7 kB) A2I20H080N [English] | 21 Mar 2016 |
应用说明 (4)
| 名称/描述 | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English] | 29 Apr 2014 |
| AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 [English] | 13 May 2009 |
| Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 (REV 1) PDF (111.6 kB) AN1987 [English] | 12 May 2004 |
| Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 (REV 0) PDF (112.8 kB) AN1977 [English] | 09 Oct 2003 |
工程设计要点 (1)
| 名称/描述 | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English] | 19 Jan 2004 |
选型工具指南 (1)
| 名称/描述 | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English] | 26 May 2016 |
封装信息 (2)
| 名称/描述 | Modified Date |
|---|---|
| 98ASA00684D, TO-WB, 17.53x9.02x2.59, Pitch 1.02, 16 Pins (REV A) PDF (84.9 kB) 98ASA00684D [English] | 11 Mar 2016 |
| 98ASA00630D, TO-WB, 17.53x9.02x2.59, Pitch 3.05, 16 Pins (REV A) PDF (80.2 kB) 98ASA00630D [English] | 15 Feb 2016 |
印刷电路板
- A2I20H080N 1800 MHz PCB DXF file (REV 1) ZIP A2I20H080N_1800_PCB 5/21/2016
订购信息
| 型号 | 状态 | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | 供电电压 (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | 输出功率 (Typ) (W) @ Intermodulation Level at Test Signal | 测试信号 | 功率增益 (Typ) (dB) @ f (MHz) | 效率 (Typ) (%) | 热阻 (Spec)(°C/W) | 匹配 | 类型 | 模具技术 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| A2I20H080GNR1 | Active | 1800 | 2200 | 30 | 48.5 | 70 | 13.5 @ AVG | W-CDMA | 28.2 @ 1840 | 43.4 | 1.9 | Input | AB, C | LDMOS |
| A2I20H080NR1 | Active | 1800 | 2200 | 30 | 48.5 | 70 | 13.5 @ AVG | W-CDMA | 28.2 @ 1840 | 43.4 | 1.9 | Input | AB, C | LDMOS |
封装环保信息
| 封装说明 | Outline Version | 包装 | 产品状态 | 部件编号 | 化学成分 | RoHS / Pb Free中国RoHS查询 | MSL | PPT (°C) |
|---|---|---|---|---|---|---|---|---|
| TO-270WB-15G | 98ASA00684D | MPQ - 500 REELPOQ - 500 BOX | Active | A2I20H080GNR1 | A2I20H080GNR1.pdf |  | 3 | 260 |
| TO-270WB-15 | 98ASA00630D | MPQ - 500 REELPOQ - 500 BOX | Active | A2I20H080NR1 | A2I20H080NR1.pdf | | 3 | 260 |
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
- Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 MMRF2010N
- Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 MMRF2010N
- Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
- RF Products Selector Guide MMT20303H
- A2I20H080N 1800 MHz PCB DXF file A2I20H080N
- 98ASA00684D, TO-WB, 17.53x9.02x2.59, Pitch 1.02, 16 Pins A2I25D012N
- A2I20H080GNR1.pdf A2I20H080N
- 98ASA00630D, TO-WB, 17.53x9.02x2.59, Pitch 3.05, 16 Pins A2I25D012N
- A2I20H080NR1.pdf A2I20H080N
