A2I20H080N: 1800-2200 MHz,13.5 W平均值,30 V Airfast LDMOS宽带集成射频放大器

特性
  • 先进的高性能内部封装Doherty
  • 片上匹配(50 Ohm隔直输入)
  • 集成静态电流温度补偿,具有启用/禁用功能
  • 专为数字预失真纠错系统而设计
  • 符合RoHS规范
TO-270WB-15 and TO-270WBG-15 Package Image
数据手册 (1)
名称/描述Modified Date
A2I20H080N 1800-2200 MHz, 13.5 W Avg, 30 V Data Sheet (REV 0) PDF (434.7 kB) A2I20H080N [English]21 Mar 2016
应用说明 (4)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 [English]13 May 2009
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 (REV 1) PDF (111.6 kB) AN1987 [English]12 May 2004
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 (REV 0) PDF (112.8 kB) AN1977 [English]09 Oct 2003
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
封装信息 (2)
名称/描述Modified Date
98ASA00684D, TO-WB, 17.53x9.02x2.59, Pitch 1.02, 16 Pins (REV A) PDF (84.9 kB) 98ASA00684D [English]11 Mar 2016
98ASA00630D, TO-WB, 17.53x9.02x2.59, Pitch 3.05, 16 Pins (REV A) PDF (80.2 kB) 98ASA00630D [English]15 Feb 2016
印刷电路板
订购信息
型号状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
A2I20H080GNR1Active180022003048.57013.5 @ AVGW-CDMA28.2 @ 184043.41.9InputAB, CLDMOS
A2I20H080NR1Active180022003048.57013.5 @ AVGW-CDMA28.2 @ 184043.41.9InputAB, CLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询MSLPPT (°C)
TO-270WB-15G98ASA00684DMPQ - 500 REELPOQ - 500 BOXActiveA2I20H080GNR1A2I20H080GNR1.pdf3260
TO-270WB-1598ASA00630DMPQ - 500 REELPOQ - 500 BOXActiveA2I20H080NR1A2I20H080NR1.pdf3260
A2I20H080N 1800-2200 MHz, 13.5 W Avg, 30 V Data Sheet A2I20H080N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 MMRF2010N
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 MMRF2010N
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
A2I20H080N 1800 MHz PCB DXF file A2I20H080N
98ASA00684D, TO-WB, 17.53x9.02x2.59, Pitch 1.02, 16 Pins A2I25D012N
A2I20H080GNR1.pdf A2I20H080N
98ASA00630D, TO-WB, 17.53x9.02x2.59, Pitch 3.05, 16 Pins A2I25D012N
A2I20H080NR1.pdf A2I20H080N