A2T18H100-25S: 1805-1995 MHz,18 W平均值,28 V Airfast LDMOS射频功率晶体管

特性
  • 先进的高性能内部封装Doherty
  • 增大负栅源电压范围,改善C类放大器运行
  • 专为数字预失真纠错系统而设计
  • 符合RoHS规范
  • 采用盘卷包装。R3后缀 = 250个,44毫米卷带宽度,13英寸卷盘。
NI-780S-4L4S Package Image
数据手册 (1)
名称/描述Modified Date
A2T18H100-25SR3 1805-1995 MHz, 18 W Avg., 28 V Airfast® RF Power LDMOS Transistor Data Sheet (REV 0) PDF (755.3 kB) A2T18H100-25S [English]31 Oct 2014
应用说明 (1)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
封装信息 (1)
名称/描述Modified Date
98ASA00406D, NI-C, 20.57x9.78x3.81, Pitch 8.89, 9 Pins (REV A) PDF (56.1 kB) 98ASA00406D [English]15 Feb 2016
印刷电路板
订购信息
型号状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
A2T18H100-25SR3Active180519952848.67218 @ AVGW-CDMA18.1 @ 180550.20.74I/OAB, CLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询PPT (°C)
NI-780S-898ASA00406DMPQ - 250 REELPOQ - 250 BOXActiveA2T18H100-25SR3A2T18H100-25SR3.pdf260
A2T18H100-25SR3 1805-1995 MHz, 18 W Avg., 28 V Airfast® RF Power LDMOS Transistor Data Sheet A2T18H100-25S
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
A2T18H100-25S 1800 MHz PCB DXF file A2T18H100-25S
98ASA00406D, NI-C, 20.57x9.78x3.81, Pitch 8.89, 9 Pins AFT26HW050S
A2T18H100-25SR3.pdf A2T18H100-25S