A2T18H450W19S: 1805-1880 MHz,89 W平均值,30 V Airfast®LDMOS射频功率晶体管

特性
  • 先进的高性能内部封装Doherty
  • 专为宽瞬时带宽应用而设计
  • 增大负栅源电压范围,改善C类放大器运行
  • 可承受极高的输出VSWR和宽带运行条件
  • 专为数字预失真纠错系统而设计
  • 符合RoHS规范
NI-1230S-4S4S Package Image
数据手册 (1)
名称/描述Modified Date
A2T18H450W19S 1805-1880 MHz, 89 W Avg, 30 V Data Sheet (REV 0) PDF (221.3 kB) A2T18H450W19S [English]08 Sep 2016
应用说明 (2)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages (REV 1) PDF (664.6 kB) AN1908 [English]24 Feb 2011
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
订购信息
型号状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
A2T18H450W19SR6Active18051880305319989 @ AVGW-CDMA16.5 @ 188047.70.27I/OAB, CLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询PPT (°C)
NI-1230S-4S4S98ASA00155DMPQ - 150 REELPOQ - 150 REELActiveA2T18H450W19SR6A2T18H450W19SR6.pdf260
A2T18H450W19S 1805-1880 MHz, 89 W Avg, 30 V Data Sheet A2T18H450W19S
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages MMRF1317H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
98ASA00155D, NI-C, 32.26x10.16x4.45, Pitch 13.72, 9 Pins mrf8s18260h
A2T18H450W19SR6.pdf A2T18H450W19S