A2T21S160-12S: 2110-2170 MHz,38 W平均值,28 V Airfast LDMOS射频功率晶体管

特性
  • 增大负栅源电压范围,改善C类放大器运行
  • 专为数字预失真纠错系统而设计
  • 为Doherty应用进行了优化
  • 符合RoHS规范
NI-780S-2L2L Package Image
数据手册 (1)
名称/描述Modified Date
2110-2170 MHz, 38 W Avg, 28 V Airfast® RF Power LDMOS Transistor Data Sheet (REV 0) PDF (467.0 kB) A2T21S160-12S [English]19 Aug 2015
应用说明 (1)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
封装信息 (1)
名称/描述Modified Date
98ASA00517D, NI-C, 20.57x9.78x3.81, Pitch 24.28, 5 Pins (REV B) PDF (53.8 kB) 98ASA00517D [English]24 Feb 2016
印刷电路板
订购信息
型号状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
A2T21S160-12SR3Active211021702851.514038 @ AVGW-CDMA18.4 @ 217032.90.3I/OABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询PPT (°C)
NI-780S-2L2L98ASA00517DMPQ - 250 REELPOQ - 250 BOXActiveA2T21S160-12SR3A2T21S160-12SR3.pdf260
2110-2170 MHz, 38 W Avg, 28 V Airfast® RF Power LDMOS Transistor Data Sheet A2T21S160-12S
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
A2T21S160-12S PCB DXF file A2T21S160-12S
98ASA00517D, NI-C, 20.57x9.78x3.81, Pitch 24.28, 5 Pins AFT21S230-12S
A2T21S160-12SR3.pdf A2T21S160-12S