A2V09H300-04N: 720-960 MHz,79 W平均值,48 V Airfast LDMOS射频功率晶体管

特性
  • 先进的高性能内部封装Doherty
  • 增大负栅源电压范围,改善C类放大器运行
  • 专为数字预失真纠错系统而设计
  • 符合RoHS规范
OM-780-4L Package Image
数据手册 (1)
名称/描述Modified Date
A2V09H300-04N 720-960 MHz, 79 W Avg, 48 V Data Sheet (REV 0) PDF (467.1 kB) A2V09H300-04N [English]17 Feb 2016
应用说明 (1)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
封装信息 (1)
名称/描述Modified Date
98ASA10833D, OMNI, 20.57x9.78x3.81, Pitch 8.89, 5 Pins (REV B) PDF (69.8 kB) 98ASA10833D [English]22 Mar 2016
印刷电路板
订购信息
型号状态状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
A2V09H300-04NR3Active7209604853.522379 @ AVGW-CDMA19.7 @ 94055.90.34InputABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询MSLPPT (°C)
OM780-4 PLASTIC98ASA10833DMPQ - 250 REELPOQ - 250 BOXActiveA2V09H300-04NR3A2V09H300-04NR3.pdf3260
A2V09H300-04N 720-960 MHz, 79 W Avg, 48 V Data Sheet A2V09H300-04N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
A2V09H300-04N 900 MHz PCB DXF file A2V09H300-04N
98ASA10833D, OMNI, 20.57x9.78x3.81, Pitch 8.89, 5 Pins MMRF1020-04N
A2V09H300-04NR3.pdf A2V09H300-04N