AFT09S282N: 720-960 MHz,80 W平均值,28 V Airfast LDMOS射频功率晶体管

特性
  • 增大负栅源电压范围,改善C类放大器运行
  • 专为数字预失真纠错系统而设计
  • 为Doherty应用进行了优化
  • 符合RoHS规范
  • 采用盘卷包装。R3后缀 = 250个,32 mm卷带宽度,13英寸卷盘。
OM-780-2 Package Image
数据手册 (1)
名称/描述Modified Date
AFT09S282NR3 720-960 MHz, 80 W AVG., 28 V Airfast® RF Power LDMOS Transistor - Data Sheet (REV 0) PDF (537.5 kB) AFT09S282N [English]30 Oct 2012
应用说明 (1)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
封装信息 (1)
名称/描述Modified Date
98ASA10831D, OMNI, 20.57x9.78x3.81, Pitch 9.96, 2 Pins (REV C) PDF (68.6 kB) 98ASA10831D [English]22 Mar 2016
支持信息 (1)
名称/描述Modified Date
New Additions to the Airfast® Family of RF Products (REV 0) PDF (1.7 MB) AIRFASTPRODEXP_TRN_SI [English]16 Jun 2012
印刷电路板
订购信息
型号状态状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
AFT09S282NR3Active7209602854.528080 @ AVGW-CDMA20 @ 96036.10.31I/OABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询MSLPPT (°C)
OM780-2 Straight Cu98ASA10831DMPQ - 250 REELPOQ - 250 REELActiveAFT09S282NR3AFT09S282NR3.pdf3260
AFT09S282NR3 720-960 MHz, 80 W AVG., 28 V Airfast® RF Power LDMOS Transistor - Data Sheet AFT09S282N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
New Additions to the Airfast® Family of RF Products AFT21S230S
AFT09S282NR3 920-960 MHz PCB DXF file AFT09S282N
98ASA10831D, OMNI, 20.57x9.78x3.81, Pitch 9.96, 2 Pins MMRF1017N
AFT09S282NR3.pdf AFT09S282N