AFT18H357-24S: 1805-1995 MHz,63 W平均值,28 V Airfast LDMOS射频功率晶体管

特性
  • 先进的高性能内部封装Doherty
  • 增大负栅源电压范围,改善C类放大器运行
  • 专为数字预失真纠错系统而设计
  • 符合RoHS规范
  • 采用盘卷包装。R6后缀 = 150个,56 mm卷带宽度,13英寸卷盘。
NI-1230S-4L2L Package Image
数据手册 (1)
名称/描述Modified Date
AFT18H357-24SR6 1805-1995 MHz, 63 W Avg., 28 V Airfast® RF Power LDMOS Transistor - Data Sheet (REV 0) PDF (782.3 kB) AFT18H357-24S [English]05 Mar 2014
应用说明 (1)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
封装信息 (1)
名称/描述Modified Date
98ASA00513D, NI-1230-4LS2L (REV A) PDF (44.6 kB) 98ASA00513D [English]10 Mar 2013
印刷电路板
订购信息
型号状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
AFT18H357-24SR6Active180519952853.422063 @ AVGW-CDMA17.3 @ 180550.30.43I/OAB, CLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询PPT (°C)
NI-1230S-4L2L98ASA00513DMPQ - 150 REELPOQ - 150 REELActiveAFT18H357-24SR6AFT18H357-24SR6.pdf260
AFT18H357-24SR6 1805-1995 MHz, 63 W Avg., 28 V Airfast® RF Power LDMOS Transistor - Data Sheet AFT18H357-24S
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
AFT18H357-24S 1800 MHz PCB DXF file AFT18H357-24S
AFT18H357-24S 1900 MHz PCB DXF file AFT18H357-24S
98ASA00513D, NI-1230-4LS2L MMRF1024HS
AFT18H357-24SR6.pdf AFT18H357-24S