AFT26H160-4S4: 2496-2690 MHz,32W平均值,28 V Airfast LDMOS射频功率晶体管

特性
  • 先进的高性能内部封装Doherty
  • 增大负栅源电压范围,改善C类放大器运行
  • 专为数字预失真纠错系统而设计
  • 符合RoHS规范
  • 采用盘卷包装。R3后缀 = 250 个,56 mm卷带宽度,13英寸卷盘。
NI-880XS-4L4S Image
数据手册 (1)
名称/描述Modified Date
AFT26H160-4S4R3 2496-2690 MHz, 32 W AVG., 28 V Airfast® RF Power LDMOS Transistor – Data Sheet (REV 1) PDF (474.3 kB) AFT26H160-4S4 [English]25 Nov 2013
应用说明 (1)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
封装信息 (1)
名称/描述Modified Date
98ASA00545D, NI-C, 23.11x9.78x3.81, Pitch 26.82, 9 Pins (REV A) PDF (56.7 kB) 98ASA00545D [English]24 Feb 2016
支持信息 (1)
名称/描述Modified Date
Airfast® RF Products for TD-LTE Base Stations (REV 0) PDF (4.1 MB) AIRFAST_TD-LTE_TRN_SI [English]01 Jun 2013
订购信息
型号状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
AFT26H160-4S4R3Active24962690285010032 @ AVGW-CDMA14.9 @ 249645.70.41I/OAB, CLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询PPT (°C)
NI880X-4L4S98ASA00545DMPQ - 250 REELPOQ - 250 BOXActiveAFT26H160-4S4R3AFT26H160-4S4R3.pdf260
AFT26H160-4S4R3 2496-2690 MHz, 32 W AVG., 28 V Airfast® RF Power LDMOS Transistor – Data Sheet AFT26H160-4S4
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
Airfast® RF Products for TD-LTE Base Stations AFT26P100-4WS
98ASA00545D, NI-C, 23.11x9.78x3.81, Pitch 26.82, 9 Pins AFT26H160-4S4
AFT26H160-4S4R3.pdf AFT26H160-4S4