BGS8L5UK: SiGe:C low-noise amplifier MMIC with bypass switch for LTE

The BGS8L5UK is a Low-Noise Amplifier (LNA) with bypass switch for LTE receiver applications, available in a Wafer Level Chip-Scale Package (WLCSP).

The BGS8L5UK delivers system-optimized gain for diversity applications where sensitivity improvement is required. The high linearity of this low noise device ensures the required receive sensitivity independent of cellular transmit power level in Frequency Division Duplex (FDD) systems. When receive signal strength is sufficient, the BGS8L5UK can be switched off to operate in bypass mode. In bypass mode the BGS8L5UK can operate at increased IP3i level and a 1 μA supply current to lower power consumption. The BGS8L5UK requires only one external matching inductor.

The BGS8L5UK is optimized for 703 MHz to 960 MHz.

sot1464-1_3d

应用说明 (1)

名称/描述	Modified Date
BGS8L5UK LTE LNA with bypass switch evaluation board (REV 1.0) PDF (720.0 kB) AN11790 [English]	13 Oct 2016

封装信息 (1)

名称/描述	Modified Date
wafer level chip-scale package, 6 bumps (REV 1.0) PDF (398.0 kB) SOT1464-1 [English]	25 Apr 2016

包装 (1)

名称/描述	Modified Date
WLCSP6; Reel dry pack, SMD, 13" Q1/T1 standard product orientation Orderable part number ending ,019 or... (REV 1.1) PDF (195.0 kB) SOT1464-1_019 [English]	04 Aug 2016