The BGS8M2 is a Low Noise Amplifier (LNA) with bypass switch for LTE receiver applications, available in a small plastic 6-pin extremely thin leadless package. The BGS8M2 requires one external matching inductor.
The BGS8M2 delivers system-optimized gain for both primary and diversity applications where sensitivity improvement is required. The high linearity of these low noise devices ensures the required receive sensitivity independent of cellular transmit power level in FDD (Frequency Division Duplex) systems. When receive signal strength is sufficient, the BGS8M2 can be switched off to operate in bypass mode at a 1 µA current, to lower power consumption.
The BGS8M2 is optimized for 1805 MHz to 2200 MHz.
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SiGe:C Low Noise Amplifier MMIC with bypass switch for LTE (REV 2.0) PDF (143.0 kB) BGS8M2 [English] | 29 Mar 2016 |
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BGS8M2 LTE LNA with bypass switch evaluation board (REV 1.0) PDF (931.0 kB) AN11655 [English] | 20 Jul 2015 |
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XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1.1 x 0.7 x 0.37 mm (REV 1.0) PDF (185.0 kB) SOT1232 [English] | 08 Feb 2016 |
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Solderlayout SOT1232 (REV 1.0) PDF (32.0 kB) SOLDERLAYOU_SOT1232 [English] | 16 May 2014 |
型号 | 状态 | Package version | @VCC [min] (V) | @VCC [max] (V) | @ICC [typ] (mA) | Gp [typ] (dB) | NF [typ] (dB) | Pi(1dB) [min] (dBm) | Pi(1dB) [typ] (dBm) | IP3i [min] (dBm) | IP3i [typ] (dBm) | @VCC (V) | @f (MHz) |
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BGS8M2 | Active | SOT1232 | 1.5 | 3.1 | 14.4 | 0.85 | -3.5 |
产品编号 | 封装说明 | Outline Version | 回流/波峰焊接 | 包装 | 产品状态 | 部件编号订购码 (12NC) | Marking | 化学成分 | RoHS / 无铅 / RHF | 无铅转换日期 | MSL | MSL LF |
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BGS8M2 | SOT1232 | Solderlayou_SOT1232 | Reel 7" Q1/T1 | Active | BGS8M2X (9340 691 93115) | Standard Marking | BGS8M2 | Always Pb-free | 1 | 1 |