BGU8M1UK: SiGe:C Low Noise Amplifier MMIC for LTE

The BGU8M1UK is a Low Noise Amplifier (LNA) for LTE receiver applications. It comes as an extremely small and thin Wafer Level Chip Scale Package (WLCSP). The BGU8M1UK requires one external matching inductor.

The BGU8M1UK adapts itself to the changing environment resulting from co-habitation of different radio systems in modern cellular handsets. It has been designed for low power consumption and optimal performance. At low jamming power levels it delivers 17 dB gain at a noise figure of 0.7 dB. During high power levels, it temporarily increases its bias current to improve sensitivity.

The BGU8M1UK is optimized for 1805 MHz to 2200 MHz.

数据手册 (1)
名称/描述Modified Date
SiGe:C Low Noise Amplifier MMIC for LTE (REV 1.0) PDF (203.0 kB) BGU8M1UK [English]19 May 2015
应用说明 (1)
名称/描述Modified Date
BGU8M1UK LTE LNA evaluation board (REV 2.0) PDF (866.0 kB) AN11595 [English]25 Feb 2015
S-参数
订购信息
型号状态Package version@VCC [min] (V)@VCC [max] (V)@ICC [typ] (mA)Gp [typ] (dB)NF [typ] (dB)Pi(1dB) [min] (dBm)IP3i [min] (dBm)IP3i [typ] (dBm)@VCC (V)Pi(1dB) [typ] (dBm)@f (MHz)
BGU8M1UKActiveNAU0001.53.1170.7-51843
封装环保信息
产品编号封装说明Outline Version回流/波峰焊接包装产品状态部件编号订购码 (12NC)Marking化学成分RoHS / 无铅 / RHF无铅转换日期MSLMSL LF
BGU8M1UKReel 13" Q1/T1 in DrypackActiveBGU8M1UKAZ (9340 690 77019)Standard MarkingBGU8M1UKAlways Pb-free11
SiGe:C Low Noise Amplifier MMIC for LTE BGU8M1UK
BGU8M1UK LTE LNA evaluation board BGU8M1UK
BGU8M1UK S-parameter and Noise BGU8M1UK