BUK653R3-30C：N沟道TrenchMOS中间电平FET
中间电平栅极驱动N沟道增强型场效应晶体管(FET)，采用塑料封装，使用先进的TrenchMOS技术。该产品设计符合相应AEC Q101标准，适用于高性能汽车电子应用。
特性和优势
应用
| 产品图片 |
关键参数
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| VDS | drain-source voltage | Tj ≥ 25 °C; Tj ≤ 175 °C | 30 | V | ||
| ID | drain current | VGS = 10 V; Tmb = 25 °C [0] | 100 | A | ||
| Ptot | total power dissipation | Tmb = 25 °C | 204 | W | ||
| RDSon | drain-source on-state resistance | VGS = 10 V; ID = 25 A; Tj = 25 °C | 2.72 | 3.3 | mΩ | |
| QGD | gate-drain charge | ID = 25 A; VDS = 24 V; VGS = 10 V | 33.3 | nC | ||
| EDS(AL)S | non-repetitive drain-source avalanche energy | ID = 100 A; Vsup ≤ 30 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped | 501 | mJ |
封装与包装
| 型号 | 封装 | Outline version | Reflow-/Wave soldering | 包装 | 产品状态 | 标示 | 可订购的器件编号, (订购码 (12NC)) |
|---|---|---|---|---|---|---|---|
| BUK653R3-30C |  TO-220AB (SOT78A) | sot078a_po | Horizontal, Rail Pack | 量产 | BUK653R3-30C | BUK653R3-30C,127( 9340 658 58127 ) |
引脚配置信息
| Pin | Symbol | Description | 外形简图 | 图形符号 |
|---|---|---|---|---|
| 1 | G | gate |  |  |
| 2 | D | drain | ||
| 3 | S | source | ||
| mb | D | mounting base; connected to drain |
无铅环保信息
| 型号 | 可订购的器件编号 | RoHS / RHF | 无铅转换日期 | 潮湿敏感度等级 | MSL LF |
|---|---|---|---|---|---|
| BUK653R3-30C | BUK653R3-30C,127 |   | Always Pb-free | NA | NA |
文档资料
| 档案名称 | 标题 | 类型 | 格式 | 日期 |
|---|---|---|---|---|
| BUK653R3-30C (中文) | N-channel TrenchMOS intermediate level FET | Data sheet | 2011-07-13 | |
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2010-03-17 | |
| AN10874 | LFPAK MOSFET thermal design guide | Application note | 2011-01-27 | |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2012-09-14 | |
| AN11113 | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2011-11-16 | |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2014-02-04 | |
| AN11160 | Designing RC Snubbers | Application note | 2012-10-01 | |
| AN11156 | Using Power MOSFET Zth Curves | Application note | 2012-10-10 | |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2012-10-29 | |
| AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2013-11-08 | |
| AN11261 | Using RC Thermal Models | Application note | 2014-05-19 | |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2014-05-22 | |
| AN11599 | Using power MOSFETs in parallel | Application note | 2015-07-07 | |
| 75017631 | Discretes Semiconductors Selection Guide 2015 | Selection guide | 2015-01-09 | |
| 75017643 | Automotive MOSFET Selection Guide 2015: Performance, Quality, Reliability | Selection guide | 2015-03-23 | |
| 75017651 | 车用 MOSFET 选型指南2015版 (chinese version) | Selection guide | 2015-04-17 | |
| BUK653R3-30C | BUK653R3-30C Spice model | SPICE model | lib | 2011-08-05 |
| BUK653R3-30C | BUK653R3-30C Thermal model | Thermal model | pdml | 2011-07-20 |
| sot078a_po | plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB | Outline drawing | 2005-03-13 |
订购信息
| 型号 | 订购码 (12NC) | 可订购的器件编号 |
|---|---|---|
| BUK653R3-30C | 9340 658 58127 | BUK653R3-30C,127 |
模型
| 标题 | 类型 | 日期 |
|---|---|---|
| BUK653R3-30C Spice model | SPICE model | 2011-08-05 |
| BUK653R3-30C Thermal model | Thermal model | 2011-07-20 |
- N-channel TrenchMOS® intermediate level FET buk653r3-30c
- Power MOSFET single-shot and repetitive avalanche ruggedness rating BUK7M12-60E
- LFPAK MOSFET thermal design guide BUK7M12-60E
- LFPAK MOSFET thermal design guide, Chinese version BUK7K8R7-40E
- LFPAK MOSFET thermal design guide - Part 2 BUK7M12-60E
- Understanding power MOSFET data sheet parameters BUK7M12-60E
- Designing RC Snubbers BUK7M12-60E
- Using Power MOSFET Zth Curves BUK7M12-60E
- Failure signature of Electrical Overstress on Power MOSFETs BUK7M12-60E
- Understanding power MOSFET data sheet parameters BUK7K6R8-40E
- Using RC Thermal Models BUK7M12-60E
- LFPAK MOSFET thermal design guide - Part 2 BUK7K8R7-40E
- Using power MOSFETs in parallel BUK7M12-60E
- Discretes Semiconductors Selection Guide 2016 BUK7M12-60E
- Automotive MOSFET Selection Guide 2016: Performance, Quality, Reliability BUK7M12-60E
- 车用 MOSFET 选型指南2015版 (chinese version) BUK7E8R3-40E
- plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB BUK9575-55A
- BUK653R3-30C Spice model BUK653R3-30C
- BUK653R3-30C Thermal model BUK653R3-30C
