BUK9Y7R2-60E: N沟道60 V,7.2 mΩ逻辑电平MOSFET,采用LFPAK56封装

逻辑电平N沟道MOSFET,采用LFPAK56 (Power SO8)封装,使用TrenchMOS技术。该产品设计符合AEC Q101标准,适用于高性能汽车电子应用。

SOT669
数据手册 (1)
名称/描述Modified Date
N-channel 60 V, 7.2 mΩ logic level MOSFET in LFPAK56 (REV 1.0) PDF (322.0 kB) BUK9Y7R2-60E [English]06 Nov 2013
应用说明 (10)
名称/描述Modified Date
Using power MOSFETs in parallel (REV 1.0) PDF (184.0 kB) AN11599 [English]13 Jul 2016
Power MOSFET single-shot and repetitive avalanche ruggedness rating (REV 3.0) PDF (146.0 kB) AN10273 [English]10 Dec 2015
LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.6 MB) AN11113_ZH [English]22 May 2014
Using RC Thermal Models (REV 2.0) PDF (1.0 MB) AN11261 [English]19 May 2014
Failure signature of Electrical Overstress on Power MOSFETs (REV 1.0) PDF (10.5 MB) AN11243 [English]29 Oct 2012
Using Power MOSFET Zth Curves (REV 1.0) PDF (212.0 kB) AN11156 [English]10 Oct 2012
Designing RC Snubbers (REV 1.0) PDF (565.0 kB) AN11160 [English]01 Oct 2012
LFPAK MOSFET thermal design guide, Chinese version (REV 1.0) PDF (515.0 kB) AN10874_ZH [English]14 Sep 2012
LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.5 MB) AN11113 [English]16 Nov 2011
LFPAK MOSFET thermal design guide (REV 2.0) PDF (401.0 kB) AN10874 [English]27 Jan 2011
选型工具指南 (1)
名称/描述Modified Date
Discretes Semiconductors Selection Guide 2016 (REV 1.0) PDF (47.9 MB) 75017631 [English]17 Feb 2016
封装信息 (1)
名称/描述Modified Date
Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads (REV 1.0) PDF (213.0 kB) SOT669 [English]08 Feb 2016
包装 (1)
名称/描述Modified Date
LFPAK56; Reel pack; SMD, 7" Q1/T1 standard product orientation Orderable part number ending ,115 or... (REV 3.0) PDF (101.0 kB) SOT669_115 [English]09 Sep 2016
报告或演示文稿 (1)
名称/描述Modified Date
High Efficiency HVAC blower motor control (REV 1.0) PDF (180.0 kB) R_10067 [English]14 Apr 2016
支持信息 (1)
名称/描述Modified Date
Power MOSFET frequently asked questions and answers (REV 1.0) PDF (1.1 MB) TN00008 [English]07 Aug 2015
SPICE
Thermal design
Thermal model
订购信息
型号状态Package versionPackage nameChannel typeNumber of transistorsVDS [max] (V)RDSon [max] @ VGS = 10 V (mΩ)RDSon [max] @ VGS = 5 V (mΩ)RDSon [max] @ VGS = 4.5 V (mΩ)RDSon [max] @ VGS = 2.5 V (mΩ)ID [max] (A)RDSon [typ] @ VGS = 10 V (mΩ)RDSon [typ] @ VGS = 5 V (mΩ)QGD [typ] (nC)QG(tot) [typ] (nC)QG(tot) [typ] @ VGS = 4.5 V (nC)QG(tot) [typ] @ VGS = 10 V (nC)Ptot [max] (W)RDSon [max] @ Tj = 175 °C (mΩ)Qr [typ] (nC)VGSth [typ] (V)ID [max] @ T = 100 °C (A)Automotive qualifiedCiss [typ] (pF)IDM [max] (A)Coss [typ] (pF)日期Rth(j-mb) [max] (K/W)
BUK9Y7R2-60EActiveSOT669LFPAK56; Power-SO8N1605.67.21004.75.4123516716.318.11.772Y37694053412013-11-070.9
封装环保信息
产品编号封装说明Outline Version回流/波峰焊接包装产品状态部件编号订购码 (12NC)Marking化学成分RoHS / 无铅 / RHFMSLMSL LF
BUK9Y7R2-60ESOT669Reel 7" Q1/T1ActiveBUK9Y7R2-60E,115 (9340 670 19115)97E260BUK9Y7R2-60E11
N-channel 60 V, 7.2 mΩ logic level MOSFET in LFPAK56 buk9y7r2-60e
Using power MOSFETs in parallel BUK7M12-60E
Power MOSFET single-shot and repetitive avalanche ruggedness rating BUK7M12-60E
LFPAK MOSFET thermal design guide - Part 2 BUK7K8R7-40E
Using RC Thermal Models BUK7M12-60E
Failure signature of Electrical Overstress on Power MOSFETs BUK7M12-60E
Using Power MOSFET Zth Curves BUK7M12-60E
Designing RC Snubbers BUK7M12-60E
LFPAK MOSFET thermal design guide, Chinese version BUK7K8R7-40E
LFPAK MOSFET thermal design guide - Part 2 BUK7M12-60E
LFPAK MOSFET thermal design guide BUK7M12-60E
Discretes Semiconductors Selection Guide 2016 BUK7M12-60E
High Efficiency HVAC blower motor control BUK7M12-60E
Power MOSFET frequently asked questions and answers BUK7M12-60E
BUK9Y7R2-60E Spice model BUK9Y7R2-60E
BUK9Y7R2-60E Thermal design model BUK9Y7R2-60E
BUK9Y7R2-60E Thermal model BUK9Y7R2-60E
Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads PHPT61003PY
LFPAK56; Reel pack; SMD, 7" Q1/T1 standard product orientation Orderable part number ending ,115 or... PHPT61003PY
PSMN9R5-30YLC