MML09212H: 400-1400 MHz,37.5 dB,22.8 dBm,0.52 dB NF E-pHEMT LNA

特性
  • 低噪声系数:0.52 dB @ 900 MHz
  • 频率:400-1400 MHz
  • 工作温度范围内无条件稳定
  • 高反向隔离度:–58 dB @ 900 MHz
  • P1dB:22.8 dBm @ 900 MHz
  • 小信号增益:37.5 dB @ 900 MHz
  • 输出三阶交调点:37.5 dBm @ 900 MHz
  • 有源偏置控制(片上)
  • 5 V单电源
  • 供电电流:150 mA
  • 50 Ohm运行(需要一些外部匹配)
  • 高性价比12引脚3 mm DFN表面贴装塑料封装
  • 符合RoHS规范
  • 采用盘卷包装。T1后缀 = 1000个,12 mm卷带宽度,7英寸卷盘。
QFN 3 x 3 Package Image
数据手册 (1)
名称/描述Modified Date
MML09212HT1 400-1400 MHz, 37.5 dB, 22.8 dBm, 0.52 dB NF E-pHEMT - Data Sheet (REV 2) PDF (800.2 kB) MML09212H [English]26 Sep 2014
应用说明 (1)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
简介 (2)
名称/描述Modified Date
Medium Power PAs and LNAs for Femtocells Fact Sheet (REV 1) PDF (301.3 kB) RFFEMTOCELLFS [English]30 Dec 2014
Low Noise Amplifiers Fact Sheet (REV 4) PDF (173.7 kB) RFLNAFS [English]30 Dec 2014
手册 (1)
名称/描述Modified Date
RF GaAs Solutions (REV 1) PDF (416.3 kB) BR1609 [English]21 Dec 2011
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
快速参考指南 (1)
名称/描述Modified Date
RF MMIC and GPA Cross Reference (REV 2) PDF (1.1 MB) MMICGPAQRG [English]21 Dec 2011
白皮书 (2)
名称/描述Modified Date
Small Cells Call for Scalable Architecture White Paper (REV 3) PDF (783.5 kB) SMCELLRFWP [English]31 May 2013
Practical Considerations for Low Noise Amplifier Design - White Paper (REV 0) PDF (318.8 kB) RFLNAWP [English]24 May 2013
封装信息 (1)
名称/描述Modified Date
98ASA00227D, 2131-01, Thermally Enhanced Quad Flat Non-Leaded Package (QFN) 12 Terminal, 0.5 Pitch (3x3x0.85) (REV O) PDF (55.7 kB) 98ASA00227D [English]14 Sep 2010
支持信息 (1)
名称/描述Modified Date
GaAs MMIC Two-stage LNAs (REV 1) PDF (2.6 MB) RFLNA_TRN_SI [English]23 Oct 2012
印刷电路板
订购信息
型号状态状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)模具技术应用LNA波段选择增益 (Typ) (dB) @ f (MHz)噪声系数 (Typ) (dB) @ f (MHz)三阶输入交截点 (Typ) (dBm) @ f (MHz)输出截取点 (Typ) (dBm) @ f (MHz)输出功率 (Typ) (dBm) @ f (MHz)电源电流 (Typ) (mA)供电电压 (Typ) (V)供电电压 (Min-Max) (V)
MML09212HT1Active4001400E-pHEMT900 MHz ISM, GSM, LTE, W-CDMA37.5 @ 9000.52 @ 900-0.5 @ 90037 @ 90022.8 @ 90015055 to 5
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询MSLPPT (°C)
QFN 12EP 3SQ*.85PO0.5098ASA00227DMPQ - 1000 REELPOQ - 1000 REELActiveMML09212HT1MML09212HT1.pdf1260
MML09212HT1 400-1400 MHz, 37.5 dB, 22.8 dBm, 0.52 dB NF E-pHEMT - Data Sheet MML09212H
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Medium Power PAs and LNAs for Femtocells Fact Sheet MMZ25332B
Low Noise Amplifiers Fact Sheet MMG20271H9
RF GaAs Solutions MMZ25332B
RF Products Selector Guide MMT20303H
RF MMIC and GPA Cross Reference MMZ25332B
Small Cells Call for Scalable Architecture White Paper vortiqa_l1sw_sc
Practical Considerations for Low Noise Amplifier Design - White Paper MMG20271H9
GaAs MMIC Two-stage LNAs MML20242H
MML09212H 400 MHz PCB DXF file MML09212H
MML09212H 900/1400 MHz PCB DXF file MML09212H
98ASA00227D, 2131-01, Thermally Enhanced Quad Flat Non-Leaded Package (QFN) 12 Terminal, 0.5 Pitch (3x3x0.85) MMZ25332B
MML09212HT1.pdf MML09212H