MRF1535N: 520 MHz,35 W,12.5 V横向N信道宽带射频功率MOSFET

特性
  • 520 MHz,12.5 V时的性能指标 输出功率:35 W 功率增益:13.5 dB 效率:55%
  • 在15.6 Vdc,520 MHz,2 dB过驱时,能承受20:1 VSWR
  • 卓越的热稳定性
  • 提供串联等效大信号阻抗参数
  • 宽带 - 整个频段全功率: 135–175 MHz 400–470 MHz 450–520 MHz
  • 可耐200°C高温的塑料封装
  • N后缀表示无铅焊端。符合RoHS规范。
  • 采用盘卷包装。T1后缀 = 500个,44 mm卷带宽度,13英寸卷盘。
TO-272-6 Wrap, TO-272-6 Package Image
数据手册 (1)
名称/描述Modified Date
MRF1535NT1, MRF1535FNT1, 520 MHz, 35 W, 12.5 V, Lateral N-Channel Broadband RF Power MOSFETs (REV 13) PDF (674.6 kB) MRF1535N [English]19 Jun 2009
应用说明 (3)
名称/描述Modified Date
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 [English]13 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN3789 [English]12 Mar 2009
Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (8.2 MB) AN3263 [English]07 Jun 2006
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
简介 (1)
名称/描述Modified Date
RFLANDMBFS: RF Mobile Radio Solutions - Fact Sheet (REV 2) PDF (364.6 kB) RFLANDMBFS [English]20 Mar 2014
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
白皮书 (1)
名称/描述Modified Date
Designing with Plastic RF Power Transistors White Paper (REV 2) PDF (894.1 kB) RFPLASTICWP [English]24 Sep 2015
封装信息 (2)
名称/描述Modified Date
98ASA10536D, TO, 12.6x23.62x2.59, Pitch 4.9, 6 Pins (REV E) PDF (70.8 kB) 98ASA10536D [English]23 Feb 2016
98ASH98116A, 1264-10, TO-272, 6 Lead (REV L) PDF (48.6 kB) 98ASH98116A [English]03 Aug 2007
订购信息
型号状态状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
MRF1535FNT1Active13652012.545.43535 @ CW1-Tone13.5 @ 520550.9UnmatchedABLDMOS
MRF1535NT1Active13652012.545.43535 @ CW1-Tone13.5 @ 520550.9UnmatchedABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询MSLPPT (°C)
TO-272-6 WRAP98ASH98116AMPQ - 500 REELPOQ - 500 BOXActiveMRF1535NT1MRF1535NT1.pdf3260
TO-272-698ASA10536DMPQ - 500 REELPOQ - 1000 BOXActiveMRF1535FNT1MRF1535FNT1.pdf3260
MRF1535NT1, MRF1535FNT1, 520 MHz, 35 W, 12.5 V, Lateral N-Channel Broadband RF Power MOSFETs mrf1535n
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RFLANDMBFS: RF Mobile Radio Solutions - Fact Sheet mrf1570n
RF Products Selector Guide MMT20303H
Designing with Plastic RF Power Transistors White Paper mrf1570n
98ASH98116A, 1264-10, TO-272, 6 Lead mrf1550n
MRF1535NT1.pdf MRF1535N
98ASA10536D, TO, 12.6x23.62x2.59, Pitch 4.9, 6 Pins mrf1550n
MRF1535FNT1.pdf MRF1535N