MRF6S27015N: 2300-2700 MHz，3 W平均值，28 V单载波W-CDMA射频功率LDMOS _ BDTIC 中国领先电子元器件代理商

MRF6S27015N: 2300-2700 MHz，3 W平均值，28 V单载波W-CDMA射频功率LDMOS

特性

典型单载波W–CDMA性能：VDD = 28 V，IDQ = 160 mA，平均输出功率 = 3 W，f = 2600 MHz，信道带宽 = 3.84 MHz。PAR = 8.5 dB @ 0.01% CCDF。功率增益：14 dB 漏极效率：22% 5 MHz偏移时的ACPR：3.84 MHz信道带宽时为–45 dBc
在28 Vdc，2600 MHz，15 W连续波输出功率时，能承受5:1 VSWR
提供串联等效大信号阻抗参数
内部匹配，简便易用
工作电压最高可达32 VDD
集成的ESD保护
可耐225°C高温的塑料封装
符合RoHS规范
采用盘卷包装。R1后缀 = 500个，24 mm卷带宽度，13英寸卷盘。

TO-270-2, TO-270G-2 Gull Package Image

数据手册 (1)

名称/描述	Modified Date
MRF6S27015NR1, MRF6S27015GNR1 2300-2700 MHz, 3 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs (REV 2) PDF (644.3 kB) MRF6S27015N [English]	19 Dec 2008

应用说明 (3)

名称/描述	Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]	29 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 [English]	13 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN3789 [English]	12 Mar 2009

工程设计要点 (1)

名称/描述	Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]	19 Jan 2004

选型工具指南 (1)

名称/描述	Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]	26 May 2016

封装信息 (2)

名称/描述	Modified Date
98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins (REV D) PDF (86.0 kB) 98ASA99301D [English]	30 Mar 2016
98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins (REV R) PDF (80.5 kB) 98ASH98117A [English]	26 Feb 2016

订购信息

型号	状态	Frequency Min (Min) (MHz)	Frequency Max (Max) (MHz)	供电电压 (Typ) (V)	P1dB (Typ) (dBm)	P1dB (Typ) (W)	输出功率 (Typ) (W) @ Intermodulation Level at Test Signal	测试信号	功率增益 (Typ) (dB) @ f (MHz)	效率 (Typ) (%)	热阻 (Spec)(°C/W)	匹配	类型	模具技术
MRF6S27015NR1	Active	2300	2700	28	41.8	15	3 @ AVG	W-CDMA	14 @ 2600	22	2.2	Input	AB	LDMOS
MRF6S27015GNR1	No Longer Manufactured	2300	2700	28	41.8	15	3 @ AVG	W-CDMA	14 @ 2600	22	2.2	Input	AB	LDMOS

封装环保信息

封装说明	Outline Version	包装	产品状态	部件编号	化学成分	RoHS / Pb Free中国RoHS查询	MSL	PPT (°C)
TO-270-2	98ASH98117A	MPQ - 500 REELPOQ - 500 REEL	Active	MRF6S27015NR1	MRF6S27015NR1.pdf		3	260
TO-270-2 GULL	98ASA99301D	MPQ - 500 REELPOQ - 500 REEL	No Longer Manufactured	MRF6S27015GNR1	MRF6S27015GNR1.pdf		3	260

MRF6S27015NR1, MRF6S27015GNR1 2300-2700 MHz, 3 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs mrf6s27015n

AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n

Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n

Using Data Sheet Impedances for RF LDMOS Devices mrf1570n

RF Products Selector Guide MMT20303H

98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins aft09ms031n

MRF6S27015NR1.pdf MRF6S27015N

98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins aft09ms031n

MRF6S27015GNR1.pdf MRF6S27015N

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