MRF6V3090N: 470-860 MHz，90 W，50 V LDMOS宽带射频功率晶体管

典型性能(窄带测试电路)：VDD = 50 V，IDQ = 350 mA，64 QAM，输入信号PAR = 9.5 dB @ 0.01% CCDF。信号类型输出功率(W) f(MHz) Gps(dB) ηD(%) ACPR(dBc) DVB-T (8k OFDM) 18平均值860 22.028.5–62.0
典型性能(宽带测试电路)：VDD = 50 V，IDQ = 450 mA，64 QAM，输入信号PAR = 9.5 dB @ 0.01% CCDF。信号类型输出功率(W) f(MHz) Gps(dB) ηD(%) 输出信号PAR(dB) IMD Shoulder(dBc) DVB-T (8k OFDM) 18平均值 47021.626.88.6–31.8 65022.928.08.7–34.4 86021.928.37.9–29.2
在50 Vdc，860 MHz，90 W连续波输出功率时，能承受10:1 VSWR，所有相角
提供串联等效大信号阻抗参数
内部输入匹配，简单易用
工作电压最高可达50 VDD
集成的ESD保护
卓越的热稳定性
增大负栅源电压范围，改善C类放大器运行
可耐225°C高温的塑料封装
符合RoHS规范
采用盘卷包装。R1后缀 = 500个，44 mm卷带宽度，13英寸卷盘。 R5后缀 = 50个，56 mm卷带宽度，13英寸卷盘。

名称/描述	Modified Date
MRF6V3090NR1, MRF6V3090NR5, MRF6V3090NBR1, MRF6V3090NBR5 470-1215 MHz, 90 W, 50 V Broadband RF Power LDMOS Transistors (REV 2) PDF (664.8 kB) MRF6V3090N [English]	18 Oct 2015

名称/描述	Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]	29 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 [English]	13 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN3789 [English]	12 Mar 2009
Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (8.2 MB) AN3263 [English]	07 Jun 2006

名称/描述	Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]	19 Jan 2004

名称/描述	Modified Date
RF Solutions for Commercial Aerospace (REV 2) PDF (1.8 MB) BR1608 [English]	04 Sep 2015
Broadcast Solutions (REV 5) PDF (818.6 kB) BR1607 [English]	08 Sep 2011

名称/描述	Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]	26 May 2016

名称/描述	Modified Date
Designing with Plastic RF Power Transistors White Paper (REV 2) PDF (894.1 kB) RFPLASTICWP [English]	24 Sep 2015
50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications (REV 4) PDF (914.5 kB) 50VRFLDMOSWP [English]	08 Sep 2011

名称/描述	Modified Date
98ASA10575D, TO, 23.0x8.0x2.59, Pitch 12.0, 4 Pins (REV F) PDF (73.4 kB) 98ASA10575D [English]	17 Mar 2016
98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins (REV F) PDF (75.9 kB) 98ASA10577D [English]	18 Jan 2016

型号	状态	Frequency Min (Min) (MHz)	Frequency Max (Max) (MHz)	供电电压 (Typ) (V)	P1dB (Typ) (dBm)	P1dB (Typ) (W)	输出功率 (Typ) (W) @ Intermodulation Level at Test Signal	测试信号	功率增益 (Typ) (dB) @ f (MHz)	效率 (Typ) (%)	热阻 (Spec)(°C/W)	匹配	类型	模具技术
MRF6V3090NBR5	Active	470	1215	50	49.5	90	18 @ AVG	OFDM	22 @ 860	28.5	0.79	Input	AB	LDMOS
MRF6V3090NR5	Active	470	1215	50	49.5	90	18 @ AVG	OFDM	22 @ 860	28.5	0.79	Input	AB	LDMOS
MRF6V3090NR1	Active	470	1215	50	49.5	90	18 @ AVG	OFDM	22 @ 860	28.5	0.79	Input	AB	LDMOS
MRF6V3090NBR1	Active	470	1215	50	49.5	90	18 @ AVG	OFDM	22 @ 860	28.5	0.79	Input	AB	LDMOS

封装说明	Outline Version	包装	产品状态	部件编号	化学成分	MSL	PPT (°C)
TO-270 WB-4	98ASA10577D	MPQ - 500 REELPOQ - 500 REEL	Active	MRF6V3090NR1	MRF6V3090NR1.pdf	3	260
TO-270 WB-4	98ASA10577D	MPQ - 50 REELPOQ - 50 REEL	Active	MRF6V3090NR5	MRF6V3090NR5.pdf	3	260
TO-272 WB-4	98ASA10575D	MPQ - 500 REELPOQ - 500 REEL	Active	MRF6V3090NBR1	MRF6V3090NBR1.pdf	3	260
TO-272 WB-4	98ASA10575D	MPQ - 50 REELPOQ - 50 REEL	Active	MRF6V3090NBR5	MRF6V3090NBR5.pdf	3	260