MRF6VP21KH: 10-235 MHz,1000 W,50 V宽带射频功率LDMOS

特性
  • 225MHz时的典型脉冲性能:VDD = 50 V,IDQ = 150 mA,输出功率 = 1000 W峰值(200 W平均值),脉冲宽度 = 100 µsec,占空比 = 20% 功率增益:24 dB 漏极效率:67.5%
  • 在50 Vdc,225 MHz,1000 W峰值功率时,能承受10:1 VSWR
  • 提供串联等效大信号阻抗参数
  • 能进行充分冷却的连续波操作功能
  • 工作电压最高可达50 VDD
  • 集成的ESD保护
  • 专为推挽操作而设计
  • 增大负栅源电压范围,改善C类放大器运行
  • 符合RoHS规范
  • 采用盘卷包装。R6后缀 = 150个,56 mm卷带宽度,13英寸卷盘。
NI-1230 Package Image
数据手册 (1)
名称/描述Modified Date
MRF6VP21KHR6 10-235 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFET (REV 4) PDF (719.8 kB) MRF6VP21KH [English]28 Apr 2010
应用说明 (1)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
手册 (2)
名称/描述Modified Date
Industrial, Scientific and Medical Solutions Brochure (REV 9) PDF (1.2 MB) BR1593 [English]03 Oct 2014
Broadcast Solutions (REV 5) PDF (818.6 kB) BR1607 [English]08 Sep 2011
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
白皮书 (1)
名称/描述Modified Date
50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications (REV 4) PDF (914.5 kB) 50VRFLDMOSWP [English]08 Sep 2011
封装信息 (1)
名称/描述Modified Date
98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins (REV G) PDF (47.5 kB) 98ASB16977C [English]05 Apr 2016
订购信息
型号状态状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
MRF6VP21KHR5Active10235506010001000 @ PeakPulse24 @ 22567.50.03UnmatchedABLDMOS
MRF6VP21KHR6No Longer Manufactured10235506010001000 @ PeakPulse24 @ 22567.50.03UnmatchedABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询PPT (°C)
NI-123098ASB16977CMPQ - 50 REELPOQ - 50 BOXActiveMRF6VP21KHR5MRF6VP21KHR5.pdf260
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
MRF6VP21KHR6MRF6VP21KHR6.pdf260
MRF6VP21KHR6 10-235 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFET mrf6vp21kh
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
Industrial, Scientific and Medical Solutions Brochure mw7ic2425n
Broadcast Solutions mrfe6vp8600h
RF Products Selector Guide MMT20303H
50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications mrfe6vp8600h
98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H
MRF6VP21KHR5.pdf MRF6VP21KH
MRF6VP21KHR6.pdf MRF6VP21KH