MRF7S21080H: 2110-2170 MHz,22 W平均值,28 V单载波W-CDMA射频功率LDMOS

特性
  • 典型单载波W-CDMA性能:VDD = 28 V,IDQ = 800 mA,平均输出功率 = 22 W,全频段,3GPP测试模型1,64DPCH带50%削峰,信道带宽 = 3.84 MHz,输入信号PAR = 7.5 dB @ 0.01% CCDF。 功率增益:18 dB 漏极效率:32% 器件输出信号PAR:6.5 dB @ 0.01% CCDF 5 MHz偏移时的ACPR:3.84 MHz信道带宽时为-38dBc
  • 在32 Vdc,2140 MHz,80 W连续波峰值调谐功率时,能承受10:1 VSWR
  • 1 dB压缩点时的连续波输出功率 ≥ 80 W
  • 100%经过PAR测试,可保证输出功率能力
  • 提供串联等效大信号阻抗参数
  • 内部匹配,简便易用
  • 集成的ESD保护
  • 增大负栅源电压范围,改善C类放大器运行
  • 专为数字预失真纠错系统而设计
  • 符合RoHS规范
  • 采用盘卷包装。R3后缀 = 250个,56 mm卷带宽度,13英寸卷盘
NI-780, NI-780S Package Image
数据手册 (1)
名称/描述Modified Date
MRF7S21080HR3, MRF7S21080HSR3 2110-2170 MHz, 22 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs (REV 1) PDF (821.5 kB) MRF7S21080H [English]31 Mar 2011
应用说明 (1)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
封装信息 (2)
名称/描述Modified Date
98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins (REV H) PDF (44.1 kB) 98ASB15607C [English]22 Mar 2016
98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins (REV J) PDF (43.5 kB) 98ASB16718C [English]22 Mar 2016
订购信息
型号状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
MRF7S21080HSR3Active2110217028498022 @ AVGW-CDMA18 @ 2170320.65I/OABLDMOS
MRF7S21080HR3No Longer Manufactured2110217028498022 @ AVGW-CDMA18 @ 2170320.65I/OABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询PPT (°C)
NI-780S98ASB16718CMPQ - 250 REELPOQ - 250 BOXActiveMRF7S21080HSR3MRF7S21080HSR3.pdf260
NI-78098ASB15607CNo Longer ManufacturedMRF7S21080HR3MRF7S21080HR3.pdf260
MRF7S21080HR3, MRF7S21080HSR3 2110-2170 MHz, 22 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs mrf7s21080h
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins MMRF1011H
MRF7S21080HSR3.pdf MRF7S21080H
98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins MMRF1011H
MRF7S21080HR3.pdf MRF7S21080H