MRF8P20100H: 1805-2025 MHz,20 W平均值,28 V单载波W-CDMA射频功率LDMOS

特性
  • 典型Doherty单载波W-CDMA性能:VDD = 28 V,IDQA = 400 mA,VGSB = 1.3 Vdc,平均输出功率 = 20 W,IQ幅度削峰,信道带宽 = 3.84 MHz,输入信号PAR = 9.9 dB @ 0.01% CCDF。 频率 Gps(dB) ηD(%) 输出PAR(dB) ACPR(dBc) 2025 MHz16.044.37.8–33.5
  • 典型Doherty单载波W-CDMA性能:VDD = 28 V,IDQA = 400 mA,VGSB = 1.3 Vdc,平均输出功率 = 20 W,IQ幅度削峰,信道带宽 = 3.84 MHz,输入信号PAR = 9.9 dB @ 0.01% CCDF。 频率 Gps(dB) ηD(%) 输出PAR(dB) ACPR(dBc) 1880 MHz16.243.57.6–30.8 1900 MHz16.143.47.6–32.6 1920 MHz15.842.97.6–34.6
  • 典型GSM EDGE性能:VDD = 28 V,IDQA = IDQB = 330 mA,平均输出功率= 42 W 频率 Gps(dB) ηD(%) SR1@ 400 kHz(dBc) SR2@ 600 kHz(dBc) EVM(% rms) 1805 MHz17.143.8–58.4–74.43.0 1840 MHz17.342.4–60.0–75.52.6 1880 MHz17.141.7–60.5–75.32.4
  • 生产测试在对称Doherty配置中进行
  • 100%经过PAR测试,可保证输出功率能力
  • 提供串联等效大信号阻抗参数和共源S参数
  • 内部匹配,简便易用
  • 集成的ESD保护
  • 增大负栅源电压范围,改善C类放大器运行
  • 专为数字预失真纠错系统而设计
  • 符合RoHS规范
  • 采用盘卷包装。R3后缀 = 250个,56 mm卷带宽度,13英寸卷盘。
NI-780-4, NI-780S-4 Package Image
数据手册 (1)
名称/描述Modified Date
MRF8P20100HR3, MRF8P20100HSR3 1805-2025 MHz, 20 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs (REV 0) PDF (1.2 MB) MRF8P20100H [English]12 Apr 2010
应用说明 (1)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
封装信息 (2)
名称/描述Modified Date
98ASA10718D, NI-C, 19.81x9.34x3.75, Pitch 4.44, 5 Pins (REV C) PDF (42.9 kB) 98ASA10718D [English]15 Aug 2016
98ASA10793D (REV A) PDF (47.9 kB) 98ASA10793D [English]21 Mar 2016
订购信息
型号状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
MRF8P20100HSR3Active180520252848.97820 @ AVGW-CDMA16 @ 202544.30.88I/OAB, CLDMOS
MRF8P20100HR3No Longer Manufactured180520252848.97820 @ AVGW-CDMA16 @ 202544.30.88I/OAB, CLDMOS
MRF8P20100HSR5No Longer Manufactured180520252848.97820 @ AVGW-CDMA16 @ 202544.30.88I/OAB, CLDMOS
MRF8P20100HR5No Longer Manufactured180520252848.97820 @ AVGW-CDMA16 @ 202544.30.88I/OAB, CLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询PPT (°C)
NI-780HS-498ASA10718DMPQ - 250 REELPOQ - 250 REELActiveMRF8P20100HSR3MRF8P20100HSR3.pdf260
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
MRF8P20100HSR5MRF8P20100HSR5.pdf260
NI 780H-498ASA10793DMPQ - 250 REELPOQ - 250 REELNo Longer ManufacturedMRF8P20100HR3MRF8P20100HR3.pdf260
No Longer ManufacturedMRF8P20100HR5MRF8P20100HR5.pdf260
MRF8P20100HR3, MRF8P20100HSR3 1805-2025 MHz, 20 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs MRF8P20100H
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
98ASA10718D, NI-C, 19.81x9.34x3.75, Pitch 4.44, 5 Pins MMRF1310H
MRF8P20100HSR3.pdf MRF8P20100H
MRF8P20100HSR5.pdf MRF8P20100H
98ASA10793D MMRF1310H
MRF8P20100HR3.pdf MRF8P20100H
MRF8P20100HR5.pdf MRF8P20100H