MRF8P20160H: 1880-2025 MHz，37 W平均值，28 V单载波W-CDMA射频功率LDMOS

典型Doherty单载波W-CDMA性能：VDD = 28 V，IDQA = 550 mA，VGSB = 1.6 Vdc，平均输出功率 = 37 W，IQ幅度削峰，信道带宽 = 3.84 MHz，输入信号PAR = 9.9 dB @ 0.01% CCDF。频率 Gps(dB) ηD(%) 输出PAR(dB) ACPR(dBc) 1880 MHz16.544.87.0–29.8 1900 MHz16.645.36.9–30.1 1920 MHz16.545.86.9–30.6
在32 Vdc，1900 MHz，150 W连续波输出功率(3 dB过驱额定输出功率)时，能承受10:1 VSWR
3 dB压缩点时，典型连续波输出功率 ≃ 160 W
典型Doherty单载波W-CDMA性能：VDD = 28 V，IDQA = 550 mA，VGSB = 1.6 Vdc，平均输出功率 = 37 W，IQ幅度削峰，信道带宽 = 3.84 MHz，输入信号PAR = 9.9 dB @ 0.01% CCDF。频率 Gps(dB) ηD(%) 输出PAR(dB) ACPR(dBc) 2025 MHz15.344.06.8–30.0
生产测试在对称Doherty配置中进行
100%经过PAR测试，可保证输出功率能力
提供大信号负载牵引参数和共源S参数
内部匹配，简便易用
集成的ESD保护
增大负栅源电压范围，改善C类放大器运行
专为数字预失真纠错系统而设计
符合RoHS规范
采用NI-780-4盘卷包装。R3后缀 = 250个，56 mm卷带宽度，13英寸卷盘。采用NI-780S-4盘卷包装。R3后缀 = 250个，32 mm卷带宽度，13英寸卷盘。

名称/描述	Modified Date
MRF8P20160HR3, MRF8P20160HSR3 1880-2025 MHz, 37 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs (REV 1) PDF (827.3 kB) MRF8P20160H [English]	23 Jul 2010

名称/描述	Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]	29 Apr 2014

名称/描述	Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]	19 Jan 2004

名称/描述	Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]	26 May 2016

名称/描述	Modified Date
98ASA10718D, NI-C, 19.81x9.34x3.75, Pitch 4.44, 5 Pins (REV C) PDF (42.9 kB) 98ASA10718D [English]	15 Aug 2016
98ASA10793D (REV A) PDF (47.9 kB) 98ASA10793D [English]	21 Mar 2016

型号	状态	Frequency Min (Min) (MHz)	Frequency Max (Max) (MHz)	供电电压 (Typ) (V)	P1dB (Typ) (dBm)	P1dB (Typ) (W)	输出功率 (Typ) (W) @ Intermodulation Level at Test Signal	测试信号	功率增益 (Typ) (dB) @ f (MHz)	效率 (Typ) (%)	热阻 (Spec)(°C/W)	匹配	类型	模具技术
MRF8P20160HR3	Active	1880	2025	28	50.3	107	37 @ AVG	W-CDMA	16.5 @ 1920	45.8	0.75	I/O	AB, C	LDMOS
MRF8P20160HSR3	Active	1880	2025	28	50.3	107	37 @ AVG	W-CDMA	16.5 @ 1920	45.8	0.75	I/O	AB, C	LDMOS
MRF8P20160HR5	No Longer Manufactured	1880	2025	28	50.3	107	37 @ AVG	W-CDMA	16.5 @ 1920	45.8	0.75	I/O	AB, C	LDMOS
MRF8P20160HSR5	No Longer Manufactured	1880	2025	28	50.3	107	37 @ AVG	W-CDMA	16.5 @ 1920	45.8	0.75	I/O	AB, C	LDMOS

封装说明	Outline Version	包装	产品状态	部件编号	化学成分	PPT (°C)
NI 780H-4	98ASA10793D	MPQ - 250 REELPOQ - 250 REEL	Active	MRF8P20160HR3	MRF8P20160HR3.pdf	260
NI 780H-4	98ASA10793D		No Longer Manufactured	MRF8P20160HR5	MRF8P20160HR5.pdf	260
NI-780HS-4	98ASA10718D	MPQ - 250 REELPOQ - 250 BOX	Active	MRF8P20160HSR3	MRF8P20160HSR3.pdf	260
NI-780HS-4	98ASA10718D		No Longer Manufactured	MRF8P20160HSR5	MRF8P20160HSR5.pdf	260