MRF8P23080H: 2300-2400 MHz,16 W平均值,28 V单载波W-CDMA,LTE横向N信道射频功率MOSFET

特性
  • 典型的Doherty单载波W-CDMA性能:VDD = 28 V,IDQA = 280 mA,VGSB = 0.7 Vdc,平均输出功率 = 16 W,IQ幅度削峰,信道带宽= 3.84 MHz,输入信号PAR = 7.5 dB @ 0.01% CCDF。 频率 Gps(dB) ηD(%) 输出PAR(dB) ACPR(dBc) 2300 MHz14.642.06.7–29.5 2350 MHz14.741.66.8–31.5 2400 MHz14.641.46.6–32.5
  • 在32 Vdc,2350 MHz,90 W连续波输出功率(3 dB过驱额定输出功率)时,能承受10:1 VSWR
  • 3 dB压缩点时,典型连续波输出功率 ≃ 100 W
  • 生产测试在对称Doherty配置中进行
  • 100%经过PAR测试,可保证输出功率能力
  • 提供串联等效大信号阻抗参数和共源S参数
  • 内部匹配,简便易用
  • 集成的ESD保护
  • 增大负栅源电压范围,改善C类放大器运行
  • 专为数字预失真纠错系统而设计
  • 符合RoHS规范
  • 采用NI-780-4盘卷包装。R3后缀 = 250个,56 mm卷带宽度,13英寸卷盘。
  • 采用NI-780S-4盘卷包装。R3后缀 = 250个,32 mm卷带宽度,13英寸卷盘。
NI-780-4, NI-780S-4 Package Image
数据手册 (1)
名称/描述Modified Date
MRF8P23080HR3, MRF8P23080HSR3 2300-2400 MHz, 16 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs (REV 1) PDF (661.0 kB) MRF8P23080H [English]30 Nov 2010
应用说明 (1)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
封装信息 (2)
名称/描述Modified Date
98ASA10718D, NI-C, 19.81x9.34x3.75, Pitch 4.44, 5 Pins (REV C) PDF (42.9 kB) 98ASA10718D [English]15 Aug 2016
98ASA10793D (REV A) PDF (47.9 kB) 98ASA10793D [English]21 Mar 2016
订购信息
型号状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
MRF8P23080HSR3Active230024002847.45516 @ AVGW-CDMA14.6 @ 2300420.89I/OAB, CLDMOS
MRF8P23080HR3No Longer Manufactured230024002847.45516 @ AVGW-CDMA14.6 @ 2300420.89I/OAB, CLDMOS
MRF8P23080HSR5No Longer Manufactured230024002847.45516 @ AVGW-CDMA14.6 @ 2300420.89I/OAB, CLDMOS
MRF8P23080HR5No Longer Manufactured230024002847.45516 @ AVGW-CDMA14.6 @ 2300420.89I/OAB, CLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询PPT (°C)
NI-780HS-498ASA10718DMPQ - 250 REELPOQ - 250 REELActiveMRF8P23080HSR3MRF8P23080HSR3.pdf260
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
MRF8P23080HSR5MRF8P23080HSR5.pdf260
NI 780H-498ASA10793DMPQ - 250 REELPOQ - 250 REELNo Longer ManufacturedMRF8P23080HR3MRF8P23080HR3.pdf260
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
MRF8P23080HR5MRF8P23080HR5.pdf260
MRF8P23080HR3, MRF8P23080HSR3 2300-2400 MHz, 16 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs mrf8p23080h
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
98ASA10718D, NI-C, 19.81x9.34x3.75, Pitch 4.44, 5 Pins MMRF1310H
MRF8P23080HSR3.pdf MRF8P23080H
MRF8P23080HSR5.pdf MRF8P23080H
98ASA10793D MMRF1310H
MRF8P23080HR3.pdf MRF8P23080H
MRF8P23080HR5.pdf MRF8P23080H