MRFE6S9046N: 920-960 MHz,35.5 W连续波,28 V GSM,GSM EDGE横向N信道射频功率MOSFET

特性
  • 典型GSM性能:VDD = 28 V,IDQ = 300 mA,连续波输出功率 = 35.5 W,f = 960 MHz 功率增益 = 19 dB 漏极效率 = 57%
  • 在32 Vdc,940 MHz,70 W连续波输出功率(3 dB过驱额定输出功率)时,能承受5:1 VSWR,旨在增强耐用性
  • 1 dB压缩点时,典型连续波输出功率 ≃ 45 W
  • 典型GSM EDGE性能:VDD = 28 V,IDQ = 285 mA,平均输出功率 = 17.8 W,全频段(920–960 MHz) 功率增益 = 19 dB 漏极效率 = 42.5% 400 kHz偏移时,频谱增生 = –62.5 dBc 600 kHz偏移时,频谱增生 = –72 dBc EVM = 2.1% rms
  • 提供串联等效大信号阻抗参数
  • 内部匹配,简便易用
  • 集成的ESD保护
  • 增大负栅源电压范围,改善C类放大器运行
  • 可耐225°C高温的塑料封装
  • 符合RoHS规范
  • 采用盘卷包装。R1后缀 = 500个,44 mm卷带宽度,13英寸卷盘。
TO-270 WB-4, TO-270 WB-4 Gull Package Image
数据手册 (1)
名称/描述Modified Date
MRFE6S9046NR1, MRFE6S9046GNR1 920-960 MHz, 35.5 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs (REV 0) PDF (645.8 kB) MRFE6S9046N [English]14 May 2009
应用说明 (3)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 [English]13 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN3789 [English]12 Mar 2009
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
封装信息 (2)
名称/描述Modified Date
98ASA10578D, TO, 17.0x9.0x2.59, Pitch 0.21, 4 Pins (REV E) PDF (75.2 kB) 98ASA10578D [English]17 Mar 2016
98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins (REV F) PDF (75.9 kB) 98ASA10577D [English]18 Jan 2016
订购信息
型号状态状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
MRFE6S9046GNR1Active9209602846.54535.5 @ CW1-Tone19 @ 960571.3I/OABLDMOS
MRFE6S9046NR1No Longer Manufactured9209602846.54535.5 @ CW1-Tone19 @ 960571.3I/OABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询MSLPPT (°C)
TO-270 WB-4 GULL98ASA10578DMPQ - 500 REELPOQ - 500 REELActiveMRFE6S9046GNR1MRFE6S9046GNR1.pdf3260
TO-270 WB-498ASA10577DMPQ - 500 REELPOQ - 500 REELNo Longer ManufacturedMRFE6S9046NR1MRFE6S9046NR1.pdf3260
MRFE6S9046NR1, MRFE6S9046GNR1 920-960 MHz, 35.5 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs mrfe6s9046n
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
98ASA10578D, TO, 17.0x9.0x2.59, Pitch 0.21, 4 Pins aft09mp055n
MRFE6S9046GNR1.pdf MRFE6S9046N
98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins aft09mp055n
MRFE6S9046NR1.pdf MRFE6S9046N