MRFE6S9060NR1: 880 MHz,14 W平均值,28 V,单载波N-CDMA横向N信道宽带射频功率MOSFET

特性
  • 880 MHz时的典型单载波N–CDMA性能,VDD = 28 V,IDQ = 450 mA,平均输出功率 = 14 W,IS–95 CDMA (导频,同步,寻呼,流量代码8 - 13)信道带宽 = 1.2288 MHz。PAR = 9.8 dB @ 0.01% CCDF。 功率增益:21.1 dB 漏极效率:33% 750 kHz偏移时的ACPR:30 kHz带宽时为–45.7 dBc
  • 在32 Vdc,880 MHz,3 dB过驱时,能承受10:1 VSWR,旨在增强耐用性。
  • 典型GSM EDGE性能:VDD = 28 V,IDQ = 500 mA,平均输出功率 = 21 W,全频段(920–960 MHz) 功率增益:20 dB 漏极效率:46% 400 kHz偏移时,频谱增生 = –62 dBc 600kHz偏移时,频谱增生 = –78 dBc EVM:1.5% rms
  • 典型GSM EDGE性能:VDD = 28 V,IDQ = 500 mA,输出功率 = 60 W,全频段(920–960 MHz) 功率增益:20 dB 漏极效率:63%
  • 提供串联等效大信号阻抗参数
  • 集成的ESD保护
  • 可耐225°C高温的塑料封装
  • 符合RoHS规范
  • 采用盘卷包装。R1后缀 = 500个,24 mm卷带宽度,13英寸卷盘。
TO-270-2 Package Image
数据手册 (1)
名称/描述Modified Date
MRFE6S9060NR1 880 MHz, 14 W Avg., 28 V, Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET (REV 1) PDF (589.9 kB) MRFE6S9060N [English]19 Oct 2007
应用说明 (3)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 [English]13 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN3789 [English]12 Mar 2009
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
手册 (1)
名称/描述Modified Date
Broadcast Solutions (REV 5) PDF (818.6 kB) BR1607 [English]08 Sep 2011
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
封装信息 (1)
名称/描述Modified Date
98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins (REV R) PDF (80.5 kB) 98ASH98117A [English]26 Feb 2016
订购信息
型号状态状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
MRFE6S9060NR1Active4709602847.86014 @ AVGN-CDMA21.1 @ 880330.88UnmatchedABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询MSLPPT (°C)
TO-270-298ASH98117AMPQ - 500 REELPOQ - 500 BOXActiveMRFE6S9060NR1MRFE6S9060NR1.pdf3260
MRFE6S9060NR1 880 MHz, 14 W Avg., 28 V, Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET mrfe6s9060nr1
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
Broadcast Solutions mrfe6vp8600h
RF Products Selector Guide MMT20303H
98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins aft09ms031n
MRFE6S9060NR1.pdf MRFE6S9060NR1