MRFE6VP5300N: 1.8-600 MHz,300 W连续波,50 V LDMOS宽带射频功率晶体管

特性
  • 宽工作频率范围
  • 非常耐用
  • 未匹配的输入和输出,可适用更宽的频率范围
  • 集成的稳定性增强功能
  • 低热阻
  • 集成的ESD保护电路
  • 符合RoHS规范
  • 采用盘卷包装。R1后缀 = 500个,44 mm卷带宽度,13英寸卷盘。
TO-270WB-4, TO-270WBG-4 Gull Package Images
数据手册 (1)
名称/描述Modified Date
MRFE6VP5300NR1, MRFE6VP5300GNR1 1.8-600 MHz, 300 W CW, 50 V Wideband RF Power LDMOS Transistor - Data Sheet (REV 1) PDF (1.0 MB) MRFE6VP5300N [English]16 Jun 2014
应用说明 (1)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
白皮书 (1)
名称/描述Modified Date
Designing with Plastic RF Power Transistors White Paper (REV 2) PDF (894.1 kB) RFPLASTICWP [English]24 Sep 2015
封装信息 (2)
名称/描述Modified Date
98ASA10578D, TO, 17.0x9.0x2.59, Pitch 0.21, 4 Pins (REV E) PDF (75.2 kB) 98ASA10578D [English]17 Mar 2016
98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins (REV F) PDF (75.9 kB) 98ASA10577D [English]18 Jan 2016
支持信息 (1)
名称/描述Modified Date
Rugged Plastic for Industrial Applications (REV 0) PDF (295.3 kB) RF_RUGGED_PLASTIC_INDUSTRIAL_TRN [English]23 May 2014
印刷电路板
订购信息
型号状态状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
MRFE6VP5300NR1Active1.86005054.8300300 @ CWCW25 @ 230700.22UnmatchedABLDMOS
MRFE6VP5300GNR1Active1.86005054.8300300 @ CWCW25 @ 230700.22UnmatchedABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询MSLPPT (°C)
TO-270 WB-4 GULL98ASA10578DMPQ - 500 REELPOQ - 500 REELActiveMRFE6VP5300GNR1MRFE6VP5300GNR1.pdf3260
TO-270 WB-498ASA10577DMPQ - 500 REELPOQ - 500 REELActiveMRFE6VP5300NR1MRFE6VP5300NR1.pdf3260
MRFE6VP5300NR1, MRFE6VP5300GNR1 1.8-600 MHz, 300 W CW, 50 V Wideband RF Power LDMOS Transistor - Data Sheet mrfe6vp5300n
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
Designing with Plastic RF Power Transistors White Paper mrf1570n
Rugged Plastic for Industrial Applications mrfe6vp5300n
MRFE6VP5300N 88-108 MHz PCB DXF file MRFE6VP5300N
98ASA10578D, TO, 17.0x9.0x2.59, Pitch 0.21, 4 Pins aft09mp055n
MRFE6VP5300GNR1.pdf MRFE6VP5300N
98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins aft09mp055n
MRFE6VP5300NR1.pdf MRFE6VP5300N