MW6S010N: 450-1500 MHz，10 W，28 V宽带射频功率LDMOS _ BDTIC 中国领先电子元器件代理商

MW6S010N: 450-1500 MHz，10 W，28 V宽带射频功率LDMOS

特性

960 MHz时的典型双频性能：VDD = 28 V，IDQ = 125 mA，输出功率 = 10 W PEP 功率增益：18 dB 漏极效率：32% IMD：–37 dBc
在28 Vdc，960 MHz，10 W连续波输出功率时，能承受10:1 VSWR
提供串联等效大信号阻抗参数
片上射频反馈，实现宽带稳定性
工作电压最高可达32 VDD
集成的ESD保护
可耐225°C高温的塑料封装
符合RoHS规范。
采用盘卷包装。R1后缀 = 500个，24 mm卷带宽度，13英寸卷盘。

TO-270-2, TO-270G-2 Gull Package Image

数据手册 (1)

名称/描述	Modified Date
MW6S010NR1, MW6S010GNR1 450-1500 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs (REV 5) PDF (742.7 kB) MW6S010N [English]	19 Jun 2009

应用说明 (3)

名称/描述	Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]	29 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 [English]	13 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN3789 [English]	12 Mar 2009

工程设计要点 (1)

名称/描述	Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]	19 Jan 2004

选型工具指南 (1)

名称/描述	Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]	26 May 2016

封装信息 (2)

名称/描述	Modified Date
98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins (REV D) PDF (86.0 kB) 98ASA99301D [English]	30 Mar 2016
98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins (REV R) PDF (80.5 kB) 98ASH98117A [English]	26 Feb 2016

订购信息

型号	状态	状态	Frequency Min (Min) (MHz)	Frequency Max (Max) (MHz)	供电电压 (Typ) (V)	P1dB (Typ) (dBm)	P1dB (Typ) (W)	输出功率 (Typ) (W) @ Intermodulation Level at Test Signal	测试信号	功率增益 (Typ) (dB) @ f (MHz)	效率 (Typ) (%)	热阻 (Spec)(°C/W)	匹配	类型	模具技术
MW6S010NR1	Active		450	1500	28	40	10	10 @ PEP	2-Tone	18 @ 960	32	2.85	Unmatched	AB	LDMOS
MW6S010GNR1	Active		450	1500	28	40	10	10 @ PEP	2-Tone	18 @ 960	32	2.85	Unmatched	AB	LDMOS

封装环保信息

封装说明	Outline Version	包装	产品状态	部件编号	化学成分	RoHS / Pb Free中国RoHS查询	MSL	PPT (°C)
TO-270-2 GULL	98ASA99301D	MPQ - 500 REELPOQ - 500 REEL	Active	MW6S010GNR1	MW6S010GNR1.pdf		3	260
TO-270-2	98ASH98117A	MPQ - 500 REELPOQ - 500 REEL	Active	MW6S010NR1	MW6S010NR1.pdf		3	260

MW6S010NR1, MW6S010GNR1 450-1500 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs MW6S010N

AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n

Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n

Using Data Sheet Impedances for RF LDMOS Devices mrf1570n

RF Products Selector Guide MMT20303H

98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins aft09ms031n

MW6S010GNR1.pdf MW6S010N

98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins aft09ms031n

MW6S010NR1.pdf MW6S010N

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