NX2020N2：30 V，N沟道Trench MOSFET _ BDTIC 中国领先电子元器件代理商

N沟道增强模式场效应晶体管(FET)采用无铅中等功率DFN2020MD-6 (SOT1220)表面贴装器件(SMD)塑料封装，使用Trench MOSFET技术。

Symbol	Parameter	Conditions	Min	Typ/Nom	Max	Unit
V_DS	drain-source voltage	T_j = 25 °C			30	V
V_GS	gate-source voltage	T_j = 25 °C	-20		20	V
I_D	drain current	V_GS = 10 V; T_amb = 25 °C; t ≤ 5 s ^[0]			10.4	A
R_DSon	drain-source on-state resistance	V_GS = 10 V; I_D = 7 A; T_j = 25 °C		16.5	19.5	mΩ

Pin	Symbol	Description
1	D	drain
2	D	drain
3	G	gate
4	S	source
5	D	drain
6	D	drain
7	D	drain
8	S	source

档案名称	标题	类型	格式	日期
NX2020N2 (中文)	30 V, N-channel Trench MOSFET	Data sheet	pdf	2014-02-26
AN10874	LFPAK MOSFET thermal design guide	Application note	pdf	2011-01-27
AN10874_ZH	LFPAK MOSFET thermal design guide, Chinese version	Application note	pdf	2012-09-14
AN11113	LFPAK MOSFET thermal design guide - Part 2	Application note	pdf	2011-11-16
AN11261	Using RC Thermal Models	Application note	pdf	2014-05-19
AN11113_ZH	LFPAK MOSFET thermal design guide - Part 2	Application note	pdf	2014-05-22
AN11599	Using power MOSFETs in parallel	Application note	pdf	2015-07-07
NX2020N2_NXP_Product_Reliability	NX2020N2 NXP Product Reliability	Quality document	pdf	2015-01-31
NX2020N2_NXP_Product_Quality	NX2020N2 NXP Product Quality	Quality document	pdf	2015-01-31
75017631	Discretes Semiconductors Selection Guide 2015	Selection guide	pdf	2015-01-09
75017590	NXP's Power MOSFET Selection Guide 2014: Smaller, faster, cooler	Selection guide	pdf	2014-09-11
sot1220_po	plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals	Outline drawing	pdf	2012-09-26
sot1220_fr	Footprint for reflow soldering SOT1220	Reflow soldering	pdf	2012-05-03
Reflow_Soldering_Profile	Reflow Soldering Profile	Reflow soldering	pdf	2013-09-30