NX3020NAKV: 30 V,200 mA双N沟道Trench MOSFET

双N沟道增强型场效应晶体管(FET),采用使用Trench MOSFET技术的超小型扁平引脚SOT666表面贴装器件(SMD)塑料封装。

SOT666
数据手册 (1)
名称/描述Modified Date
30 V, 200 mA dual N-channel Trench MOSFET (REV 2.0) PDF (218.0 kB) NX3020NAKV [English]29 Oct 2013
应用说明 (8)
名称/描述Modified Date
Using power MOSFETs in parallel (REV 1.0) PDF (184.0 kB) AN11599 [English]13 Jul 2016
Power MOSFET single-shot and repetitive avalanche ruggedness rating (REV 3.0) PDF (146.0 kB) AN10273 [English]10 Dec 2015
LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.6 MB) AN11113_ZH [English]22 May 2014
Using RC Thermal Models (REV 2.0) PDF (1.0 MB) AN11261 [English]19 May 2014
Failure signature of Electrical Overstress on Power MOSFETs (REV 1.0) PDF (10.5 MB) AN11243 [English]29 Oct 2012
LFPAK MOSFET thermal design guide, Chinese version (REV 1.0) PDF (515.0 kB) AN10874_ZH [English]14 Sep 2012
LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.5 MB) AN11113 [English]16 Nov 2011
LFPAK MOSFET thermal design guide (REV 2.0) PDF (401.0 kB) AN10874 [English]27 Jan 2011
选型工具指南 (2)
名称/描述Modified Date
Discretes Semiconductors Selection Guide 2016 (REV 1.0) PDF (47.9 MB) 75017631 [English]17 Feb 2016
NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler (REV 1.0) PDF (6.2 MB) 75017590 [English]11 Sep 2014
封装信息 (1)
名称/描述Modified Date
plastic surface-mounted package; 6 leads (REV 1.0) PDF (188.0 kB) SOT666 [English]08 Feb 2016
包装 (2)
名称/描述Modified Date
Tape reel SMD; standard product orientation 12NC ending 115 (REV 1.0) PDF (178.0 kB) SOT666_115 [English]29 Nov 2012
Tape reel SMD; standard product orientation 12NC ending 315 (REV 1.0) PDF (180.0 kB) SOT666_315 [English]29 Nov 2012
可靠性与质量信息 (2)
名称/描述Modified Date
NX3020NAKV NXP® Product Reliability (REV 1.1) PDF (84.0 kB) NX3020NAKV_1 [English]31 Jan 2015
NX3020NAKV NXP Product Quality (REV 1.2) PDF (74.0 kB) NX3020NAKV_NXP_PRODUCT_QUALITY [English]31 Jan 2015
支持信息 (2)
名称/描述Modified Date
Power MOSFET frequently asked questions and answers (REV 1.0) PDF (1.1 MB) TN00008 [English]07 Aug 2015
Reflow Soldering Profile (REV 1.0) PDF (34.0 kB) REFLOW_SOLDERING_PROFILE [English]30 Sep 2013
订购信息
型号状态Package namePackage versionChannel typeNumber of transistorsVDS [max] (V)RDSon [max] @ VGS = 10 V (mΩ)RDSon [max] @ VGS = 5 V (mΩ)RDSon [max] @ VGS = 4.5 V (mΩ)RDSon [max] @ VGS = 2.5 V (mΩ)Tj [max] (°C)ID [max] (A)QGD [typ] (nC)QG(tot) [typ] @ VGS = 4.5 V (nC)QG(tot) [typ] (nC)QG(tot) [typ] @ VGS = 10 V (nC)Ptot [max] (W)Qr [typ] (nC)VGSth [typ] (V)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)日期
NX3020NAKVActiveSOT666SOT666N23045005200130001500.20.060.340.340.261.2N132.62012-07-16
封装环保信息
产品编号封装说明Outline Version回流/波峰焊接包装产品状态部件编号订购码 (12NC)Marking化学成分RoHS / 无铅 / RHF无铅转换日期EFRIFR(FIT)MTBF(小时)MSLMSL LF
NX3020NAKVSOT666Reflow_Soldering_ProfileReel 7" Q1/T1 Pitch 2mmActiveNX3020NAKVYL (9340 670 68315)GBNX3020NAKVAlways Pb-free149.00.691.45E911
Reel 7" Q1/T1ActiveNX3020NAKV,115 (9340 670 68115)GBNX3020NAKVAlways Pb-free149.00.691.45E911
30 V, 200 mA dual N-channel Trench MOSFET NX3020NAKV
Using power MOSFETs in parallel BUK7M12-60E
Power MOSFET single-shot and repetitive avalanche ruggedness rating BUK7M12-60E
LFPAK MOSFET thermal design guide - Part 2 BUK7K8R7-40E
Using RC Thermal Models BUK7M12-60E
Failure signature of Electrical Overstress on Power MOSFETs BUK7M12-60E
LFPAK MOSFET thermal design guide, Chinese version BUK7K8R7-40E
LFPAK MOSFET thermal design guide - Part 2 BUK7M12-60E
LFPAK MOSFET thermal design guide BUK7M12-60E
Discretes Semiconductors Selection Guide 2016 BUK7M12-60E
NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler BSS84AKW
NX3020NAKV NXP® Product Reliability NX3020NAKV
NX3020NAKV NXP Product Quality NX3020NAKV
Power MOSFET frequently asked questions and answers BUK7M12-60E
plastic surface-mounted package; 6 leads BSS84AKV
Reflow_Soldering_Profile Wave_Soldering_Profile LPC1112FD20
Tape reel SMD; standard product orientation 12NC ending 315 PEMH9
Tape reel SMD; standard product orientation 12NC ending 115 BSS84AKV
1PSXSB17