PHD101NQ03LT: N沟道TrenchMOS逻辑电平FET

逻辑电平N沟道增强型场效应晶体管(FET),采用塑料封装,使用TrenchMOS技术。该产品仅设计适用于计算、通信、消费电子和工业应用。

SOT428
数据手册 (1)
名称/描述Modified Date
N-channel TrenchMOS® logic level FET (REV 5.0) PDF (165.0 kB) PHD101NQ03LT [English]31 Oct 2011
应用说明 (12)
名称/描述Modified Date
Using power MOSFETs in parallel (REV 1.0) PDF (184.0 kB) AN11599 [English]13 Jul 2016
Power MOSFET single-shot and repetitive avalanche ruggedness rating (REV 3.0) PDF (146.0 kB) AN10273 [English]10 Dec 2015
LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.6 MB) AN11113_ZH [English]22 May 2014
Using RC Thermal Models (REV 2.0) PDF (1.0 MB) AN11261 [English]19 May 2014
Understanding power MOSFET data sheet parameters (REV 4.0) PDF (571.0 kB) AN11158 [English]04 Feb 2014
Understanding power MOSFET data sheet parameters (REV 3.0) PDF (903.0 kB) AN11158_ZH [English]08 Nov 2013
Failure signature of Electrical Overstress on Power MOSFETs (REV 1.0) PDF (10.5 MB) AN11243 [English]29 Oct 2012
Using Power MOSFET Zth Curves (REV 1.0) PDF (212.0 kB) AN11156 [English]10 Oct 2012
Designing RC Snubbers (REV 1.0) PDF (565.0 kB) AN11160 [English]01 Oct 2012
LFPAK MOSFET thermal design guide, Chinese version (REV 1.0) PDF (515.0 kB) AN10874_ZH [English]14 Sep 2012
LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.5 MB) AN11113 [English]16 Nov 2011
LFPAK MOSFET thermal design guide (REV 2.0) PDF (401.0 kB) AN10874 [English]27 Jan 2011
选型工具指南 (2)
名称/描述Modified Date
Discretes Semiconductors Selection Guide 2016 (REV 1.0) PDF (47.9 MB) 75017631 [English]17 Feb 2016
NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler (REV 1.0) PDF (6.2 MB) 75017590 [English]11 Sep 2014
封装信息 (1)
名称/描述Modified Date
plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) (REV 1.0) PDF (221.0 kB) SOT428 [English]08 Feb 2016
包装 (1)
名称/描述Modified Date
Tape reel SMD; standard product orientation; 12NC ending 118 (REV 1.0) PDF (184.0 kB) SOT428_118 [English]23 Nov 2012
支持信息 (1)
名称/描述Modified Date
Power MOSFET frequently asked questions and answers (REV 1.0) PDF (1.1 MB) TN00008 [English]07 Aug 2015
订购信息
型号状态Package versionPackage nameChannel typeNumber of transistorsVDS [max] (V)RDSon [max] @ VGS = 10 V (mΩ)RDSon [max] @ VGS = 5 V (mΩ)RDSon [max] @ VGS = 4.5 V (mΩ)RDSon [max] @ VGS = 2.5 V (mΩ)Tj [max] (°C)ID [max] (A)QGD [typ] (nC)QG(tot) [typ] @ VGS = 4.5 V (nC)QG(tot) [typ] (nC)QG(tot) [typ] @ VGS = 10 V (nC)Ptot [max] (W)Qr [typ] (nC)VGSth [typ] (V)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)日期
PHD101NQ03LTActiveSOT428DPAKN1305.57.517575823166331.9N21806002011-01-05
封装环保信息
产品编号封装说明Outline Version回流/波峰焊接包装产品状态部件编号订购码 (12NC)Marking化学成分RoHS / 无铅 / RHFMSLMSL LF
PHD101NQ03LTSOT428Reel 13" Q1/T1ActivePHD101NQ03LT,118 (9340 570 29118)PHD101NQ-03LTPHD101NQ03LT11
N-channel TrenchMOS® logic level FET PHD101NQ03LT
Using power MOSFETs in parallel BUK7M12-60E
Power MOSFET single-shot and repetitive avalanche ruggedness rating BUK7M12-60E
LFPAK MOSFET thermal design guide - Part 2 BUK7K8R7-40E
Using RC Thermal Models BUK7M12-60E
Understanding power MOSFET data sheet parameters BUK7M12-60E
Understanding power MOSFET data sheet parameters BUK7K6R8-40E
Failure signature of Electrical Overstress on Power MOSFETs BUK7M12-60E
Using Power MOSFET Zth Curves BUK7M12-60E
Designing RC Snubbers BUK7M12-60E
LFPAK MOSFET thermal design guide, Chinese version BUK7K8R7-40E
LFPAK MOSFET thermal design guide - Part 2 BUK7M12-60E
LFPAK MOSFET thermal design guide BUK7M12-60E
Discretes Semiconductors Selection Guide 2016 BUK7M12-60E
NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler BSS84AKW
Power MOSFET frequently asked questions and answers BUK7M12-60E
plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) BUK7277-55A
Tape reel SMD; standard product orientation; 12NC ending 118 BUK7277-55A
BTH151S-650R