PMCM6501VPE: 12 V, P-channel Trench MOSFET
P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.
wlcsp6_ssmos_3d
数据手册 (1)
| 名称/描述 | Modified Date |
|---|---|
| 12 V, P-channel Trench MOSFET (REV 1.0) PDF (362.0 kB) PMCM6501VPE [English] | 10 Aug 2015 |
应用说明 (6)
| 名称/描述 | Modified Date |
|---|---|
| Using power MOSFETs in parallel (REV 1.0) PDF (184.0 kB) AN11599 [English] | 13 Jul 2016 |
| LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.6 MB) AN11113_ZH [English] | 22 May 2014 |
| Using RC Thermal Models (REV 2.0) PDF (1.0 MB) AN11261 [English] | 19 May 2014 |
| LFPAK MOSFET thermal design guide, Chinese version (REV 1.0) PDF (515.0 kB) AN10874_ZH [English] | 14 Sep 2012 |
| LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.5 MB) AN11113 [English] | 16 Nov 2011 |
| LFPAK MOSFET thermal design guide (REV 2.0) PDF (401.0 kB) AN10874 [English] | 27 Jan 2011 |
选型工具指南 (2)
| 名称/描述 | Modified Date |
|---|---|
| Discretes Semiconductors Selection Guide 2016 (REV 1.0) PDF (47.9 MB) 75017631 [English] | 17 Feb 2016 |
| NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler (REV 1.0) PDF (6.2 MB) 75017590 [English] | 11 Sep 2014 |
封装信息 (1)
| 名称/描述 | Modified Date |
|---|---|
| wafer level chip-size package; 6 bumps (3 x 2) (REV 1.0) PDF (369.0 kB) PMCM6501VPE-SSMOS_PO [English] | 20 Jul 2015 |
支持信息 (2)
| 名称/描述 | Modified Date |
|---|---|
| Power MOSFET frequently asked questions and answers (REV 1.0) PDF (1.1 MB) TN00008 [English] | 07 Aug 2015 |
| pmcm6501vpe-ssmos_fr (REV 1.0) PDF (346.0 kB) PMCM6501VPE-SSMOS_FR [English] | 20 Jul 2015 |
订购信息
| 型号 | 状态 | Package name | Package version | Channel type | Number of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 5 V (mΩ) | RDSon [max] @ VGS = 4.5 V (mΩ) | RDSon [max] @ VGS = 2.5 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | Ptot [max] (W) | QG(tot) [typ] @ VGS = 10 V (nC) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | 日期 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PMCM6501VPE | Active | WLCSP6 | OL-PMCM6501VPE | P | 1 | -12 | 25 | 33 | 150 | -8.2 | 5 | 19.6 | 19.6 | 0.556 | -0.6 | N | 1400 | 430 | 2015-07-29 |
封装环保信息
| 产品编号 | 封装说明 | Outline Version | 回流/波峰焊接 | 包装 | 产品状态 | 部件编号订购码 (12NC) | Marking | 化学成分 | RoHS / 无铅 / RHF | 无铅转换日期 | MSL | MSL LF |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PMCM6501VPE | | pmcm6501vpe-ssmos_po | pmcm6501vpe-ssmos_fr | Reel 7" Q1/T1 | Active | PMCM6501VPEZ (9340 688 75023) | AD | PMCM6501VPE |    | Always Pb-free | 1 | 1 |
| Reel 11¼" Q1/T1 in LargePack | Withdrawn | PMCM6501VPEF (9340 688 75135) | AD | PMCM6501VPE |
- 12 V, P-channel Trench MOSFET PMCM6501VPE
- Using power MOSFETs in parallel BUK7M12-60E
- LFPAK MOSFET thermal design guide - Part 2 BUK7K8R7-40E
- Using RC Thermal Models BUK7M12-60E
- LFPAK MOSFET thermal design guide, Chinese version BUK7K8R7-40E
- LFPAK MOSFET thermal design guide - Part 2 BUK7M12-60E
- LFPAK MOSFET thermal design guide BUK7M12-60E
- Discretes Semiconductors Selection Guide 2016 BUK7M12-60E
- NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler BSS84AKW
- Power MOSFET frequently asked questions and answers BUK7M12-60E
- pmcm6501vpe-ssmos_po PMCM6501VPE
- pmcm6501vpe-ssmos_fr PMCM6501VPE
- PMCM6501VPE
