Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
名称/描述 | Modified Date |
---|---|
30 V, dual N-channel Trench MOSFET (REV 1.0) PDF (252.0 kB) PMDPB56XNEA [English] | 19 Apr 2016 |
名称/描述 | Modified Date |
---|---|
DFN2020D-6: plastic, thermally enhanced ultra thin and small outline package; no leads; 6 terminals; body 2 x 2 x... (REV 1.0) PDF (201.0 kB) SOT1118D [English] | 08 Feb 2016 |
型号 | 状态 | Package name | Package version | Channel type | Number of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 5 V (mΩ) | RDSon [max] @ VGS = 4.5 V (mΩ) | RDSon [max] @ VGS = 2.5 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | QG(tot) [typ] (nC) | Ptot [max] (W) | QG(tot) [typ] @ VGS = 10 V (nC) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | 日期 |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PMDPB56XNEA | Active | DFN2020D-6 | SOT1118D | N | 2 | 30 | 72 | 102 | 150 | 3.1 | 0.8 | 2.9 | 2.9 | 0.485 | 1 | Y | 256 | 31 | 2016-04-19 |
产品编号 | 封装说明 | Outline Version | 回流/波峰焊接 | 包装 | 产品状态 | 部件编号订购码 (12NC) | Marking | 化学成分 | RoHS / 无铅 / RHF | 无铅转换日期 | EFR | IFR(FIT) | MTBF(小时) | MSL | MSL LF |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PMDPB56XNEA | SOT1118D | Reel 7" Q1/T1 | Active | PMDPB56XNEAX (9340 698 78115) | 3A | PMDPB56XNEA | Always Pb-free | 234.0 | 1.08 | 9.26E8 | 1 | 1 |