PMDPB56XNEA: 30 V, dual N-channel Trench MOSFET

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

sot1118d_3d
数据手册 (1)
名称/描述Modified Date
30 V, dual N-channel Trench MOSFET (REV 1.0) PDF (252.0 kB) PMDPB56XNEA [English]19 Apr 2016
封装信息 (1)
名称/描述Modified Date
DFN2020D-6: plastic, thermally enhanced ultra thin and small outline package; no leads; 6 terminals; body 2 x 2 x... (REV 1.0) PDF (201.0 kB) SOT1118D [English]08 Feb 2016
SPICE
订购信息
型号状态Package namePackage versionChannel typeNumber of transistorsVDS [max] (V)RDSon [max] @ VGS = 10 V (mΩ)RDSon [max] @ VGS = 5 V (mΩ)RDSon [max] @ VGS = 4.5 V (mΩ)RDSon [max] @ VGS = 2.5 V (mΩ)Tj [max] (°C)ID [max] (A)QGD [typ] (nC)QG(tot) [typ] @ VGS = 4.5 V (nC)QG(tot) [typ] (nC)Ptot [max] (W)QG(tot) [typ] @ VGS = 10 V (nC)Qr [typ] (nC)VGSth [typ] (V)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)日期
PMDPB56XNEAActiveDFN2020D-6SOT1118DN230721021503.10.82.92.90.4851Y256312016-04-19
封装环保信息
产品编号封装说明Outline Version回流/波峰焊接包装产品状态部件编号订购码 (12NC)Marking化学成分RoHS / 无铅 / RHF无铅转换日期EFRIFR(FIT)MTBF(小时)MSLMSL LF
PMDPB56XNEASOT1118DReel 7" Q1/T1ActivePMDPB56XNEAX (9340 698 78115)3APMDPB56XNEAAlways Pb-free234.01.089.26E811
30 V, dual N-channel Trench MOSFET PMDPB56XNEA
PMDPB56XNEA SPICE model PMDPB56XNEA
DFN2020D-6: plastic, thermally enhanced ultra thin and small outline package; no leads; 6 terminals; body 2 x 2 x... PBSS5260PAPS
DOUBLE_LOW_VCESAT_BISS_TRANSISTORS_IN_DFN2020_6