PMGD290UCEA: 20 / 20 V,725 / 500 mA N/P沟道Trench MOSFET

互补N/P沟道增强型场效应晶体管(FET),采用使用Trench MOSFET技术的极小型SOT363表面贴装器件(SMD)塑料封装。

SOT363
数据手册 (1)
名称/描述Modified Date
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET (REV 5.0) PDF (360.0 kB) PMGD290UCEA [English]28 Mar 2014
应用说明 (7)
名称/描述Modified Date
Using power MOSFETs in parallel (REV 1.0) PDF (184.0 kB) AN11599 [English]13 Jul 2016
Power MOSFET single-shot and repetitive avalanche ruggedness rating (REV 3.0) PDF (146.0 kB) AN10273 [English]10 Dec 2015
LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.6 MB) AN11113_ZH [English]22 May 2014
Using RC Thermal Models (REV 2.0) PDF (1.0 MB) AN11261 [English]19 May 2014
LFPAK MOSFET thermal design guide, Chinese version (REV 1.0) PDF (515.0 kB) AN10874_ZH [English]14 Sep 2012
LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.5 MB) AN11113 [English]16 Nov 2011
LFPAK MOSFET thermal design guide (REV 2.0) PDF (401.0 kB) AN10874 [English]27 Jan 2011
选型工具指南 (2)
名称/描述Modified Date
Discretes Semiconductors Selection Guide 2016 (REV 1.0) PDF (47.9 MB) 75017631 [English]17 Feb 2016
NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler (REV 1.0) PDF (6.2 MB) 75017590 [English]11 Sep 2014
封装信息 (1)
名称/描述Modified Date
plastic surface-mounted package; 6 leads (REV 1.0) PDF (246.0 kB) SOT363_1 [English]08 Feb 2016
包装 (1)
名称/描述Modified Date
TSSOP6; Tape reel SMD; standard product orientation 12NC ending 115 (REV 1.0) PDF (187.0 kB) SOT363_115 [English]15 Nov 2012
可靠性与质量信息 (2)
名称/描述Modified Date
PMGD290UCEA NXP® Product Reliability (REV 1.1) PDF (84.0 kB) PMGD290UCEA_1 [English]31 Jan 2015
PMGD290UCEA NXP® Product Quality (REV 1.1) PDF (74.0 kB) PMGD290UCEA_NXP_PRODUCT_QUALITY [English]31 Jan 2015
支持信息 (4)
名称/描述Modified Date
Power MOSFET frequently asked questions and answers (REV 1.0) PDF (1.1 MB) TN00008 [English]07 Aug 2015
Reflow Soldering Profile (REV 1.0) PDF (34.0 kB) REFLOW_SOLDERING_PROFILE [English]30 Sep 2013
Wave Soldering Profile (REV 1.0) PDF (20.0 kB) WAVE_SOLDERING_PROFILE [English]30 Sep 2013
MAR_SOT363 Topmark (REV 1.0) PDF (104.0 kB) MAR_SOT363 [English]03 Jun 2013
订购信息
型号状态Package namePackage versionChannel typeNumber of transistorsVDS [max] (V)RDSon [max] @ VGS = 10 V (mΩ)RDSon [max] @ VGS = 5 V (mΩ)RDSon [max] @ VGS = 4.5 V (mΩ)RDSon [max] @ VGS = 2.5 V (mΩ)Tj [max] (°C)ID [max] (A)QGD [typ] (nC)QG(tot) [typ] (nC)QG(tot) [typ] @ VGS = 4.5 V (nC)QG(tot) [typ] @ VGS = 10 V (nC)Ptot [max] (W)Qr [typ] (nC)VGSth [typ] (V)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)日期
PMGD290UCEAActiveTSSOP6SOT363N/P2203806201500.7250.150.450.450.280.75Y55152013-04-17
封装环保信息
产品编号封装说明Outline Version回流/波峰焊接包装产品状态部件编号订购码 (12NC)Marking化学成分RoHS / 无铅 / RHF无铅转换日期EFRIFR(FIT)MTBF(小时)MSLMSL LF
PMGD290UCEASOT363Reflow_Soldering_Profile Wave_Soldering_Profile
Reflow_Soldering_Profile Wave_Soldering_Profile
Reel 7" Q1/T1ActivePMGD290UCEAX (9340 676 04115)YD%PMGD290UCEAAlways Pb-free149.00.691.45E911
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET PMGD290UCEA
Using power MOSFETs in parallel BUK7M12-60E
Power MOSFET single-shot and repetitive avalanche ruggedness rating BUK7M12-60E
LFPAK MOSFET thermal design guide - Part 2 BUK7K8R7-40E
Using RC Thermal Models BUK7M12-60E
LFPAK MOSFET thermal design guide, Chinese version BUK7K8R7-40E
LFPAK MOSFET thermal design guide - Part 2 BUK7M12-60E
LFPAK MOSFET thermal design guide BUK7M12-60E
Discretes Semiconductors Selection Guide 2016 BUK7M12-60E
NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler BSS84AKW
PMGD290UCEA NXP® Product Reliability PMGD290UCEA
PMGD290UCEA NXP® Product Quality PMGD290UCEA
Power MOSFET frequently asked questions and answers BUK7M12-60E
MAR_SOT363 Topmark BSS84AKS
plastic surface-mounted package; 6 leads BSS84AKS
Reflow_Soldering_Profile Wave_Soldering_Profile LPC1112FD20
Reflow_Soldering_Profile Wave_Soldering_Profile LPC1112FD20
TSSOP6; Tape reel SMD; standard product orientation 12NC ending 115 BSS84AKS
BFU520Y