PML340SN: N沟道TrenchMOS标准电平FET

标准电平N沟道增强型场效应晶体管(FET),采用塑料封装,使用TrenchMOS技术。该产品仅设计适用于计算、通信、消费电子和工业应用。

SOT873-1
数据手册 (1)
名称/描述Modified Date
N-channel TrenchMOS® standard level FET (REV 1.0) PDF (89.0 kB) PML340SN [English]24 Aug 2006
应用说明 (10)
名称/描述Modified Date
Using power MOSFETs in parallel (REV 1.0) PDF (184.0 kB) AN11599 [English]13 Jul 2016
Power MOSFET single-shot and repetitive avalanche ruggedness rating (REV 3.0) PDF (146.0 kB) AN10273 [English]10 Dec 2015
LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.6 MB) AN11113_ZH [English]22 May 2014
Using RC Thermal Models (REV 2.0) PDF (1.0 MB) AN11261 [English]19 May 2014
Understanding power MOSFET data sheet parameters (REV 4.0) PDF (571.0 kB) AN11158 [English]04 Feb 2014
Understanding power MOSFET data sheet parameters (REV 3.0) PDF (903.0 kB) AN11158_ZH [English]08 Nov 2013
Failure signature of Electrical Overstress on Power MOSFETs (REV 1.0) PDF (10.5 MB) AN11243 [English]29 Oct 2012
LFPAK MOSFET thermal design guide, Chinese version (REV 1.0) PDF (515.0 kB) AN10874_ZH [English]14 Sep 2012
LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.5 MB) AN11113 [English]16 Nov 2011
LFPAK MOSFET thermal design guide (REV 2.0) PDF (401.0 kB) AN10874 [English]27 Jan 2011
选型工具指南 (3)
名称/描述Modified Date
Discretes Semiconductors Selection Guide 2016 (REV 1.0) PDF (47.9 MB) 75017631 [English]17 Feb 2016
NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler (REV 1.0) PDF (6.2 MB) 75017590 [English]11 Sep 2014
Powerful solutions for DC/DC conversion (REV 1.0) PDF (394.0 kB) 75015887 [English]01 Jan 2007
封装信息 (1)
名称/描述Modified Date
DFN3333-8: plastic thermal enhanced very thin small outline package; no leads; 8 terminals (REV 1.0) PDF (186.0 kB) SOT873-1 [English]08 Feb 2016
支持信息 (1)
名称/描述Modified Date
Power MOSFET frequently asked questions and answers (REV 1.0) PDF (1.1 MB) TN00008 [English]07 Aug 2015
SPICE
订购信息
型号状态Package namePackage versionChannel typeNumber of transistorsVDS [max] (V)RDSon [max] @ VGS = 10 V (mΩ)RDSon [max] @ VGS = 5 V (mΩ)RDSon [max] @ VGS = 4.5 V (mΩ)RDSon [max] @ VGS = 2.5 V (mΩ)Tj [max] (°C)ID [max] (A)QGD [typ] (nC)QG(tot) [typ] (nC)QG(tot) [typ] @ VGS = 4.5 V (nC)Ptot [max] (W)QG(tot) [typ] @ VGS = 10 V (nC)Qr [typ] (nC)VGSth [typ] (V)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)日期
PML340SNActiveDFN3333-8SOT873-1N12203861507.34.2513.25013.23403N656692011-01-05
封装环保信息
产品编号封装说明Outline Version回流/波峰焊接包装产品状态部件编号订购码 (12NC)Marking化学成分RoHS / 无铅 / RHF无铅转换日期MSLMSL LF
PML340SNSOT873-1Reel 13" Q1/T1ActivePML340SN,118 (9352 816 15118)Standard MarkingPML340SNAlways Pb-free11
N-channel TrenchMOS® standard level FET PML340SN
Using power MOSFETs in parallel BUK7M12-60E
Power MOSFET single-shot and repetitive avalanche ruggedness rating BUK7M12-60E
LFPAK MOSFET thermal design guide - Part 2 BUK7K8R7-40E
Using RC Thermal Models BUK7M12-60E
Understanding power MOSFET data sheet parameters BUK7M12-60E
Understanding power MOSFET data sheet parameters BUK7K6R8-40E
Failure signature of Electrical Overstress on Power MOSFETs BUK7M12-60E
LFPAK MOSFET thermal design guide, Chinese version BUK7K8R7-40E
LFPAK MOSFET thermal design guide - Part 2 BUK7M12-60E
LFPAK MOSFET thermal design guide BUK7M12-60E
Discretes Semiconductors Selection Guide 2016 BUK7M12-60E
NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler BSS84AKW
Powerful solutions for DC/DC conversion PBSS5320T
Power MOSFET frequently asked questions and answers BUK7M12-60E
PML340SN Spice model PML340SN
SOT873-1 PML340SN
PML340SN