PMV48XPA: 20 V,P沟道Trench MOSFET

P沟道增强型场效应晶体管(FET),采用小型SOT23 (TO-236AB)表面贴装器件(SMD)塑料封装,使用Trench MOSFET技术。

SOT023
数据手册 (1)
名称/描述Modified Date
20 V, P-channel Trench MOSFET (REV 1.0) PDF (251.0 kB) PMV48XPA [English]10 Mar 2014
应用说明 (8)
名称/描述Modified Date
Using power MOSFETs in parallel (REV 1.0) PDF (184.0 kB) AN11599 [English]13 Jul 2016
Power MOSFET single-shot and repetitive avalanche ruggedness rating (REV 3.0) PDF (146.0 kB) AN10273 [English]10 Dec 2015
LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.6 MB) AN11113_ZH [English]22 May 2014
Using RC Thermal Models (REV 2.0) PDF (1.0 MB) AN11261 [English]19 May 2014
Failure signature of Electrical Overstress on Power MOSFETs (REV 1.0) PDF (10.5 MB) AN11243 [English]29 Oct 2012
LFPAK MOSFET thermal design guide, Chinese version (REV 1.0) PDF (515.0 kB) AN10874_ZH [English]14 Sep 2012
LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.5 MB) AN11113 [English]16 Nov 2011
LFPAK MOSFET thermal design guide (REV 2.0) PDF (401.0 kB) AN10874 [English]27 Jan 2011
选型工具指南 (1)
名称/描述Modified Date
Discretes Semiconductors Selection Guide 2016 (REV 1.0) PDF (47.9 MB) 75017631 [English]17 Feb 2016
封装信息 (1)
名称/描述Modified Date
plastic surface-mounted package; 3 leads (REV 1.0) PDF (213.0 kB) SOT23 [English]08 Feb 2016
包装 (1)
名称/描述Modified Date
Tape reel SMD; standard product orientation 12NC ending 215 (REV 1.0) PDF (202.0 kB) SOT23_215 [English]16 Nov 2012
可靠性与质量信息 (2)
名称/描述Modified Date
PMV48XPA NXP® Product Quality (REV 1.1) PDF (74.0 kB) PMV48XPA_NXP_PRODUCT_QUALITY [English]31 Jan 2015
PMV48XPA NXP® Product Reliability (REV 1.1) PDF (84.0 kB) PMV48XPA_NXP_PRODUCT_RELIABILITY [English]31 Jan 2015
支持信息 (3)
名称/描述Modified Date
Power MOSFET frequently asked questions and answers (REV 1.0) PDF (1.1 MB) TN00008 [English]07 Aug 2015
Reflow Soldering Profile (REV 1.0) PDF (34.0 kB) REFLOW_SOLDERING_PROFILE [English]30 Sep 2013
Wave Soldering Profile (REV 1.0) PDF (20.0 kB) WAVE_SOLDERING_PROFILE [English]30 Sep 2013
SPICE
订购信息
型号状态Package versionPackage nameChannel typeNumber of transistorsVDS [max] (V)RDSon [max] @ VGS = 10 V (mΩ)RDSon [max] @ VGS = 5 V (mΩ)RDSon [max] @ VGS = 4.5 V (mΩ)RDSon [max] @ VGS = 2.5 V (mΩ)ID [max] (A)QGD [typ] (nC)RDSon [typ] @ VGS = 4.5 V (mΩ)QG(tot) [typ] (nC)QG(tot) [typ] @ VGS = 4.5 V (nC)RDSon [typ] @ VGS = 2.5 V (mΩ)QG(tot) [typ] @ VGS = 10 V (nC)Ptot [max] (W)Qr [typ] (nC)VGSth [typ] (V)Automotive qualifiedID [max] @ T = 100 °C (A)IDM [max] (A)Ciss [typ] (pF)Coss [typ] (pF)日期Rth(j-mb) [max] (K/W)
PMV48XPAActiveSOT23TO-236ABP1-205581-3.51.8488.58.5710.51-1Y-2.2-1410001302014-03-051000
封装环保信息
产品编号封装说明Outline Version回流/波峰焊接包装产品状态部件编号订购码 (12NC)Marking化学成分RoHS / 无铅 / RHF无铅转换日期EFRIFR(FIT)MTBF(小时)MSLMSL LF
PMV48XPASOT23Reflow_Soldering_Profile Wave_Soldering_Profile
Reflow_Soldering_Profile Wave_Soldering_Profile
Reel 7" Q3/T4ActivePMV48XPAR (9340 672 01215)%DZPMV48XPAAlways Pb-free234.01.089.26E811
20 V, P-channel Trench MOSFET pmv48xpa
Using power MOSFETs in parallel BUK7M12-60E
Power MOSFET single-shot and repetitive avalanche ruggedness rating BUK7M12-60E
LFPAK MOSFET thermal design guide - Part 2 BUK7K8R7-40E
Using RC Thermal Models BUK7M12-60E
Failure signature of Electrical Overstress on Power MOSFETs BUK7M12-60E
LFPAK MOSFET thermal design guide, Chinese version BUK7K8R7-40E
LFPAK MOSFET thermal design guide - Part 2 BUK7M12-60E
LFPAK MOSFET thermal design guide BUK7M12-60E
Discretes Semiconductors Selection Guide 2016 BUK7M12-60E
PMV48XPA NXP® Product Quality pmv48xpa
PMV48XPA NXP® Product Reliability pmv48xpa
Power MOSFET frequently asked questions and answers BUK7M12-60E
PMV48XPA Spice model PMV48XPA
plastic surface-mounted package; 3 leads BSS84AK
Reflow_Soldering_Profile Wave_Soldering_Profile LPC1112FD20
Reflow_Soldering_Profile Wave_Soldering_Profile LPC1112FD20
Tape reel SMD; standard product orientation 12NC ending 215 BSS84AK
PMBFJ309