N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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40 V, N-channel Trench MOSFET (REV 1.0) PDF (256.0 kB) PMV65ENEA [English] | 28 Apr 2016 |
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plastic surface-mounted package; 3 leads (REV 1.0) PDF (213.0 kB) SOT23 [English] | 08 Feb 2016 |
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Tape reel SMD; standard product orientation 12NC ending 215 (REV 1.0) PDF (202.0 kB) SOT23_215 [English] | 16 Nov 2012 |
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Reflow Soldering Profile (REV 1.0) PDF (34.0 kB) REFLOW_SOLDERING_PROFILE [English] | 30 Sep 2013 |
Wave Soldering Profile (REV 1.0) PDF (20.0 kB) WAVE_SOLDERING_PROFILE [English] | 30 Sep 2013 |
型号 | 状态 | Package version | Package name | Channel type | Number of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 5 V (mΩ) | RDSon [max] @ VGS = 4.5 V (mΩ) | RDSon [max] @ VGS = 2.5 V (mΩ) | RDSon [typ] @ VGS = 10 V (mΩ) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | RDSon [typ] @ VGS = 4.5 V (mΩ) | QG(tot) [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | ID [max] @ T = 100 °C (A) | Ciss [typ] (pF) | IDM [max] (A) | Coss [typ] (pF) | 日期 | Rth(j-mb) [max] (K/W) |
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PMV65ENEA | Active | SOT23 | TO-236AB | N | 1 | 40 | 75 | 99 | 64 | 2.7 | 0.8 | 79 | 4.1 | 4.1 | 0.49 | 4.1 | 1.6 | Y | 1.7 | 160 | 11 | 25 | 2016-04-28 | 160 |
产品编号 | 封装说明 | Outline Version | 回流/波峰焊接 | 包装 | 产品状态 | 部件编号订购码 (12NC) | Marking | 化学成分 | RoHS / 无铅 / RHF | 无铅转换日期 | EFR | IFR(FIT) | MTBF(小时) | MSL | MSL LF |
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PMV65ENEA | SOT23 | Reflow_Soldering_Profile
Wave_Soldering_Profile Reflow_Soldering_Profile Wave_Soldering_Profile | Reel 7" Q3/T4 | Active | PMV65ENEAR (9340 701 23215) | BT% | PMV65ENEA | Always Pb-free | 234.0 | 1.08 | 9.26E8 | 1 | 1 |