PMZ950UPE: 20 V，P沟道Trench MOSFET _ BDTIC 中国领先电子元器件代理商

PMZ950UPE: 20 V，P沟道Trench MOSFET

P沟道增强模式场效应晶体管(FET)。采用无铅超小型DFN1006-3 (SOT883)表面贴装器件(SMD)塑料封装，使用Trench MOSFET技术。

SOT883

数据手册 (1)

名称/描述	Modified Date
20 V, P-channel Trench MOSFET (REV 2.0) PDF (232.0 kB) PMZ950UPE [English]	10 Jul 2014

应用说明 (6)

名称/描述	Modified Date
Using power MOSFETs in parallel (REV 1.0) PDF (184.0 kB) AN11599 [English]	13 Jul 2016
LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.6 MB) AN11113_ZH [English]	22 May 2014
Using RC Thermal Models (REV 2.0) PDF (1.0 MB) AN11261 [English]	19 May 2014
LFPAK MOSFET thermal design guide, Chinese version (REV 1.0) PDF (515.0 kB) AN10874_ZH [English]	14 Sep 2012
LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.5 MB) AN11113 [English]	16 Nov 2011
LFPAK MOSFET thermal design guide (REV 2.0) PDF (401.0 kB) AN10874 [English]	27 Jan 2011

选型工具指南 (2)

名称/描述	Modified Date
Discretes Semiconductors Selection Guide 2016 (REV 1.0) PDF (47.9 MB) 75017631 [English]	17 Feb 2016
NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler (REV 1.0) PDF (6.2 MB) 75017590 [English]	11 Sep 2014

封装信息 (1)

名称/描述	Modified Date
DFN1006-3: leadless ultra small plastic package; 3 solder lands (REV 1.0) PDF (181.0 kB) SOT883 [English]	08 Feb 2016

包装 (1)

名称/描述	Modified Date
Leadless ultra small package; Reel pack, SMD, 7" Q1/T1 standard product orientation Orderable part number ending... (REV 2.0) PDF (150.0 kB) SOT883_315 [English]	22 Jul 2016

可靠性与质量信息 (2)

名称/描述	Modified Date
PMZ950UPE NXP® Product Reliability (REV 1.1) PDF (84.0 kB) PMZ950UPE_1 [English]	31 Jan 2015
PMZ950UPE NXP® Product Quality (REV 1.1) PDF (74.0 kB) PMZ950UPE_NXP_PRODUCT_QUALITY [English]	31 Jan 2015

支持信息 (2)

名称/描述	Modified Date
Power MOSFET frequently asked questions and answers (REV 1.0) PDF (1.1 MB) TN00008 [English]	07 Aug 2015
Reflow Soldering Profile (REV 1.0) PDF (34.0 kB) REFLOW_SOLDERING_PROFILE [English]	30 Sep 2013

SPICE

PMZ950UPE Spice model (REV 1.0) lib PMZ950UPE_15_07_2014 1/27/2015

订购信息

型号	状态	Package version	Package name	Channel type	Number of transistors	R_DSon [max] @ V_GS = 10 V (mΩ)	V_DS [max] (V)	R_DSon [max] @ V_GS = 5 V (mΩ)	R_DSon [max] @ V_GS = 4.5 V (mΩ)	R_DSon [max] @ V_GS = 2.5 V (mΩ)	T_j [max] (°C)	I_D [max] (A)	Q_GD [typ] (nC)	Q_G(tot) [typ] (nC)	QG(tot) [typ] @ VGS = 4.5 V (nC)	P_tot [max] (W)	QG(tot) [typ] @ VGS = 10 V (nC)	Q_r [typ] (nC)	V_GSth [typ] (V)	Automotive qualified	C_iss [typ] (pF)	C_oss [typ] (pF)	日期
PMZ950UPE	Active	SOT883	DFN1006-3	P	1		-20		1400	2200	150	-0.5	0.1	1.19	1.19	0.36			-0.7	N	43	14	2014-05-07

封装环保信息

产品编号	封装说明	Outline Version	回流/波峰焊接	包装	产品状态	部件编号订购码 (12NC)	Marking	化学成分	RoHS / 无铅 / RHF	无铅转换日期	EFR	IFR(FIT)	MTBF（小时）	MSL	MSL LF
PMZ950UPE		SOT883	Reflow_Soldering_Profile	Reel 7" Q1/T1 Pitch 2mm	Active	PMZ950UPEYL (9340 684 45315)	ZT	PMZ950UPE		Always Pb-free	234.0	1.08	9.26E8	1	1

20 V, P-channel Trench MOSFET PMZ950UPE

Using power MOSFETs in parallel BUK7M12-60E

LFPAK MOSFET thermal design guide - Part 2 BUK7K8R7-40E

Using RC Thermal Models BUK7M12-60E

LFPAK MOSFET thermal design guide, Chinese version BUK7K8R7-40E

LFPAK MOSFET thermal design guide - Part 2 BUK7M12-60E

LFPAK MOSFET thermal design guide BUK7M12-60E

Discretes Semiconductors Selection Guide 2016 BUK7M12-60E

NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler BSS84AKW

PMZ950UPE NXP® Product Reliability PMZ950UPE

PMZ950UPE NXP® Product Quality PMZ950UPE

Power MOSFET frequently asked questions and answers BUK7M12-60E

PMZ950UPE Spice model PMZ950UPE

DFN1006-3: leadless ultra small plastic package; 3 solder lands BSS84AKM

Reflow_Soldering_Profile Wave_Soldering_Profile LPC1112FD20

Leadless ultra small package; Reel pack, SMD, 7" Q1/T1 standard product orientation Orderable part number ending... BSS84AKM

PMZ950UPE

©1993 - 2024 BDTIC