PMZB350UPE: 20 V，单P沟道Trench MOSFET
P沟道增强型场效应晶体管(FET)，采用使用Trench MOSFET技术的无引脚超小型DFN1006B-3 (SOT883B)表面贴装器件(SMD)塑料封装。
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数据手册 (1)
| 名称/描述 | Modified Date |
|---|---|
| 20 V, single P-channel Trench MOSFET (REV 1.0) PDF (192.0 kB) PMZB350UPE [English] | 01 Aug 2012 |
应用说明 (10)
| 名称/描述 | Modified Date |
|---|---|
| Using power MOSFETs in parallel (REV 1.0) PDF (184.0 kB) AN11599 [English] | 13 Jul 2016 |
| Power MOSFET single-shot and repetitive avalanche ruggedness rating (REV 3.0) PDF (146.0 kB) AN10273 [English] | 10 Dec 2015 |
| LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.6 MB) AN11113_ZH [English] | 22 May 2014 |
| Using RC Thermal Models (REV 2.0) PDF (1.0 MB) AN11261 [English] | 19 May 2014 |
| Understanding power MOSFET data sheet parameters (REV 4.0) PDF (571.0 kB) AN11158 [English] | 04 Feb 2014 |
| Understanding power MOSFET data sheet parameters (REV 3.0) PDF (903.0 kB) AN11158_ZH [English] | 08 Nov 2013 |
| Failure signature of Electrical Overstress on Power MOSFETs (REV 1.0) PDF (10.5 MB) AN11243 [English] | 29 Oct 2012 |
| LFPAK MOSFET thermal design guide, Chinese version (REV 1.0) PDF (515.0 kB) AN10874_ZH [English] | 14 Sep 2012 |
| LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.5 MB) AN11113 [English] | 16 Nov 2011 |
| LFPAK MOSFET thermal design guide (REV 2.0) PDF (401.0 kB) AN10874 [English] | 27 Jan 2011 |
手册 (2)
| 名称/描述 | Modified Date |
|---|---|
| 适用于便携设备和移动电话... (REV 1.0) PDF (4.9 MB) 939775017444_ZH [English] | 28 Oct 2013 |
| Discretes for portable devices and mobile handsets (REV 1.1) PDF (3.9 MB) 939775017444 [English] | 04 Sep 2013 |
选型工具指南 (3)
| 名称/描述 | Modified Date |
|---|---|
| Discretes Semiconductors Selection Guide 2016 (REV 1.0) PDF (47.9 MB) 75017631 [English] | 17 Feb 2016 |
| NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler (REV 1.0) PDF (6.2 MB) 75017590 [English] | 11 Sep 2014 |
| Advanced cross reference list DFN* MOSFETs (REV 1.1) PDF (248.0 kB) 75017313 [English] | 19 Jun 2012 |
封装信息 (1)
| 名称/描述 | Modified Date |
|---|---|
| DFN1006B-3: leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.37 mm (REV 1.0) PDF (181.0 kB) SOT883B [English] | 08 Feb 2016 |
包装 (1)
| 名称/描述 | Modified Date |
|---|---|
| Leadless ultra small package; Reel pack, SMD, 7" Q3/T4 standard product orientation Orderable part number ending... (REV 1.0) PDF (206.0 kB) SOT883B_315 [English] | 22 Jul 2016 |
可靠性与质量信息 (2)
| 名称/描述 | Modified Date |
|---|---|
| PMZB350UPE NXP® Product Reliability (REV 1.1) PDF (84.0 kB) PMZB350UPE_1 [English] | 31 Jan 2015 |
| PMZB350UPE NXP® Product Quality (REV 1.1) PDF (74.0 kB) PMZB350UPE_NXP_PRODUCT_QUALITY [English] | 31 Jan 2015 |
支持信息 (2)
| 名称/描述 | Modified Date |
|---|---|
| Power MOSFET frequently asked questions and answers (REV 1.0) PDF (1.1 MB) TN00008 [English] | 07 Aug 2015 |
| Reflow Soldering Profile (REV 1.0) PDF (34.0 kB) REFLOW_SOLDERING_PROFILE [English] | 30 Sep 2013 |
SPICE
- PMZB350UPE Spice model (REV 1.0) lib PMZB350UPE_30_05_2012 12/13/2013
订购信息
| 型号 | 状态 | Package version | Package name | Channel type | Number of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 5 V (mΩ) | RDSon [max] @ VGS = 4.5 V (mΩ) | RDSon [max] @ VGS = 2.5 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | QG(tot) [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | VGSth [typ] (V) | Qr [typ] (nC) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | 日期 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PMZB350UPE | Active | SOT883B | DFN1006B-3 | P | 1 | -20 | 450 | 645 | 150 | -1.4 | 0.25 | 1.3 | 1.3 | 0.36 | -0.7 | N | 127 | 34 | 2012-08-24 |
封装环保信息
| 产品编号 | 封装说明 | Outline Version | 回流/波峰焊接 | 包装 | 产品状态 | 部件编号订购码 (12NC) | Marking | 化学成分 | RoHS / 无铅 / RHF | 无铅转换日期 | EFR | IFR(FIT) | MTBF（小时） | MSL | MSL LF |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PMZB350UPE | | SOT883B | Reflow_Soldering_Profile | Reel 7" Q1/T1 Pitch 2mm | Active | PMZB350UPE,315 (9340 668 41315) | 0100 1100 | PMZB350UPE |    | Always Pb-free | 234.0 | 1.08 | 9.26E8 | 1 | 1 |
- 20 V, single P-channel Trench MOSFET PMZB350UPE
- Using power MOSFETs in parallel BUK7M12-60E
- Power MOSFET single-shot and repetitive avalanche ruggedness rating BUK7M12-60E
- LFPAK MOSFET thermal design guide - Part 2 BUK7K8R7-40E
- Using RC Thermal Models BUK7M12-60E
- Understanding power MOSFET data sheet parameters BUK7M12-60E
- Understanding power MOSFET data sheet parameters BUK7K6R8-40E
- Failure signature of Electrical Overstress on Power MOSFETs BUK7M12-60E
- LFPAK MOSFET thermal design guide, Chinese version BUK7K8R7-40E
- LFPAK MOSFET thermal design guide - Part 2 BUK7M12-60E
- LFPAK MOSFET thermal design guide BUK7M12-60E
- 适用于便携设备和移动电话... ptvsxs1ur_automotive
- Discretes for portable devices and mobile handsets ptvsxs1ur_automotive
- Discretes Semiconductors Selection Guide 2016 BUK7M12-60E
- NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler BSS84AKW
- Advanced cross reference list DFN* MOSFETs PMZB370UNE
- PMZB350UPE NXP® Product Reliability PMZB350UPE
- PMZB350UPE NXP® Product Quality PMZB350UPE
- Power MOSFET frequently asked questions and answers BUK7M12-60E
- PMZB350UPE Spice model PMZB350UPE
- DFN1006B-3: leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.37 mm BC857BMB
- Reflow_Soldering_Profile Wave_Soldering_Profile LPC1112FD20
- Leadless ultra small package; Reel pack, SMD, 7" Q3/T4 standard product orientation Orderable part number ending... BC857BMB
- PMZB950UPE
