PSMN2R0-25YLD: N沟道25 V, 2.07 mΩ逻辑电平MOSFET,采用LFPAK56封装和NextPowerS3技术

逻辑电平栅极驱动N沟道增强型模式MOSFET,采用LFPAK56封装。NextPowerS3产品组合采用恩智浦特有的“SchottkyPlus”技术,具有通常只有集成肖特基或类肖特基二极管的MOSFET才具备的高效率低峰值性能,却没有令人烦恼的高漏电流问题。NextPowerS3特别适合于高开关频率下的高效应用。

SOT669
数据手册 (1)
名称/描述Modified Date
N-channel 25 V, 2.09 mΩ, 140 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology (REV 1.1) PDF (241.0 kB) PSMN2R0-25YLD [English]19 Apr 2016
应用说明 (9)
名称/描述Modified Date
Using power MOSFETs in parallel (REV 1.0) PDF (184.0 kB) AN11599 [English]13 Jul 2016
Power MOSFET single-shot and repetitive avalanche ruggedness rating (REV 3.0) PDF (146.0 kB) AN10273 [English]10 Dec 2015
Using RC Thermal Models (REV 2.0) PDF (1.0 MB) AN11261 [English]19 May 2014
Understanding power MOSFET data sheet parameters (REV 4.0) PDF (571.0 kB) AN11158 [English]04 Feb 2014
Failure signature of Electrical Overstress on Power MOSFETs (REV 1.0) PDF (10.5 MB) AN11243 [English]29 Oct 2012
Using Power MOSFET Zth Curves (REV 1.0) PDF (212.0 kB) AN11156 [English]10 Oct 2012
Designing RC Snubbers (REV 1.0) PDF (565.0 kB) AN11160 [English]01 Oct 2012
LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.5 MB) AN11113 [English]16 Nov 2011
LFPAK MOSFET thermal design guide (REV 2.0) PDF (401.0 kB) AN10874 [English]27 Jan 2011
手册 (1)
名称/描述Modified Date
Ultra-reliable LFPAK56 and LFPAK33 (REV 1.0) PDF (4.4 MB) 75017659 [English]18 May 2015
选型工具指南 (1)
名称/描述Modified Date
NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler (REV 1.0) PDF (6.2 MB) 75017590 [English]11 Sep 2014
封装信息 (1)
名称/描述Modified Date
Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads (REV 1.0) PDF (213.0 kB) SOT669 [English]08 Feb 2016
包装 (1)
名称/描述Modified Date
LFPAK56; Reel pack; SMD, 7" Q1/T1 standard product orientation Orderable part number ending ,115 or... (REV 3.0) PDF (101.0 kB) SOT669_115 [English]09 Sep 2016
支持信息 (1)
名称/描述Modified Date
Power MOSFET frequently asked questions and answers (REV 1.0) PDF (1.1 MB) TN00008 [English]07 Aug 2015
SPICE
Thermal design
Thermal model
订购信息
型号状态Package versionPackage nameChannel typeNumber of transistorsVDS [max] (V)RDSon [max] @ VGS = 10 V (mΩ)RDSon [max] @ VGS = 5 V (mΩ)RDSon [max] @ VGS = 4.5 V (mΩ)RDSon [max] @ VGS = 2.5 V (mΩ)Tj [max] (°C)ID [max] (A)QGD [typ] (nC)QG(tot) [typ] @ VGS = 4.5 V (nC)QG(tot) [typ] (nC)Ptot [max] (W)QG(tot) [typ] @ VGS = 10 V (nC)Qr [typ] (nC)VGSth [typ] (V)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)日期
PSMN2R0-25YLDActiveSOT669LFPAK56; Power-SO8N1252.092.911751003.615.734.111534.116.81.68N248511422016-03-22
封装环保信息
产品编号封装说明Outline Version回流/波峰焊接包装产品状态部件编号订购码 (12NC)Marking化学成分RoHS / 无铅 / RHFMSLMSL LF
PSMN2R0-25YLDSOT669Reel 7" Q1/T1ActivePSMN2R0-25YLDX (9340 699 12115)2D025LPSMN2R0-25YLD11
N-channel 25 V, 2.09 mΩ, 140 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology PSMN2R0-25YLD
Using power MOSFETs in parallel BUK7M12-60E
Power MOSFET single-shot and repetitive avalanche ruggedness rating BUK7M12-60E
Using RC Thermal Models BUK7M12-60E
Understanding power MOSFET data sheet parameters BUK7M12-60E
Failure signature of Electrical Overstress on Power MOSFETs BUK7M12-60E
Using Power MOSFET Zth Curves BUK7M12-60E
Designing RC Snubbers BUK7M12-60E
LFPAK MOSFET thermal design guide - Part 2 BUK7M12-60E
LFPAK MOSFET thermal design guide BUK7M12-60E
Ultra-reliable LFPAK56 and LFPAK33 BUK7M12-60E
NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler BSS84AKW
Power MOSFET frequently asked questions and answers BUK7M12-60E
PSMN2R0-25YLD SPICE model PSMN2R0-25YLD
PSMN2R0-25YLD Thermal design model PSMN2R0-25YLD
PSMN2R0-25YLD Thermal model PSMN2R0-25YLD
Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads PHPT61003PY
LFPAK56; Reel pack; SMD, 7" Q1/T1 standard product orientation Orderable part number ending ,115 or... PHPT61003PY
PSMN9R5-30YLC