PSMN3R0-30YLD: N沟道30 V,3.0 mΩ逻辑电平MOSFET,采用LFPAK56封装,使用NextPowerS3技术

逻辑电平栅极驱动N沟道增强型MOSFET,采用LFPAK56封装。NextPowerS3产品组合利用恩智浦特有的“SchottkyPlus”技术,提供高频率低峰值性能,通常只有集成肖特基或类肖特基二极管的MOSFET才具有这种性能,并且没有令人烦恼的高漏电流问题。NextPowerS3特别适合于高开关频率下的高效应用。

SOT669
数据手册 (1)
名称/描述Modified Date
N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology (REV 1.6) PDF (288.0 kB) PSMN3R0-30YLD [English]18 Feb 2014
应用说明 (6)
名称/描述Modified Date
Using power MOSFETs in parallel (REV 1.0) PDF (184.0 kB) AN11599 [English]13 Jul 2016
LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.6 MB) AN11113_ZH [English]22 May 2014
Using RC Thermal Models (REV 2.0) PDF (1.0 MB) AN11261 [English]19 May 2014
LFPAK MOSFET thermal design guide, Chinese version (REV 1.0) PDF (515.0 kB) AN10874_ZH [English]14 Sep 2012
LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.5 MB) AN11113 [English]16 Nov 2011
LFPAK MOSFET thermal design guide (REV 2.0) PDF (401.0 kB) AN10874 [English]27 Jan 2011
手册 (1)
名称/描述Modified Date
Ultra-reliable LFPAK56 and LFPAK33 (REV 1.0) PDF (4.4 MB) 75017659 [English]18 May 2015
选型工具指南 (2)
名称/描述Modified Date
Discretes Semiconductors Selection Guide 2016 (REV 1.0) PDF (47.9 MB) 75017631 [English]17 Feb 2016
NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler (REV 1.0) PDF (6.2 MB) 75017590 [English]11 Sep 2014
封装信息 (1)
名称/描述Modified Date
Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads (REV 1.0) PDF (213.0 kB) SOT669 [English]08 Feb 2016
包装 (1)
名称/描述Modified Date
LFPAK56; Reel pack; SMD, 7" Q1/T1 standard product orientation Orderable part number ending ,115 or... (REV 3.0) PDF (101.0 kB) SOT669_115 [English]09 Sep 2016
支持信息 (1)
名称/描述Modified Date
Power MOSFET frequently asked questions and answers (REV 1.0) PDF (1.1 MB) TN00008 [English]07 Aug 2015
SPICE
Thermal design
Thermal model
订购信息
型号状态Package versionPackage nameChannel typeNumber of transistorsVDS [max] (V)RDSon [max] @ VGS = 10 V (mΩ)RDSon [max] @ VGS = 5 V (mΩ)RDSon [max] @ VGS = 4.5 V (mΩ)RDSon [max] @ VGS = 2.5 V (mΩ)Tj [max] (°C)QGD [typ] (nC)QG(tot) [typ] (nC)ID [max] (A)Qr [typ] (nC)QG(tot) [typ] @ VGS = 4.5 V (nC)VGSth [typ] (V)QG(tot) [typ] @ VGS = 10 V (nC)Ptot [max] (W)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)日期
PSMN3R0-30YLDActiveSOT669LFPAK56; Power-SO8N1303.141754.514.51001914.51.73191N195910292013-10-02
封装环保信息
产品编号封装说明Outline Version回流/波峰焊接包装产品状态部件编号订购码 (12NC)Marking化学成分RoHS / 无铅 / RHFMSLMSL LF
PSMN3R0-30YLDSOT669Reel 7" Q1/T1ActivePSMN3R0-30YLDX (9340 679 66115)3D030LPSMN3R0-30YLD11
N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology PSMN3R0-30YLD
Using power MOSFETs in parallel BUK7M12-60E
LFPAK MOSFET thermal design guide - Part 2 BUK7K8R7-40E
Using RC Thermal Models BUK7M12-60E
LFPAK MOSFET thermal design guide, Chinese version BUK7K8R7-40E
LFPAK MOSFET thermal design guide - Part 2 BUK7M12-60E
LFPAK MOSFET thermal design guide BUK7M12-60E
Ultra-reliable LFPAK56 and LFPAK33 BUK7M12-60E
Discretes Semiconductors Selection Guide 2016 BUK7M12-60E
NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler BSS84AKW
Power MOSFET frequently asked questions and answers BUK7M12-60E
PSMN3R0-30YLD Spice model PSMN3R0-30YLD
PSMN3R0-30YLD Thermal design model PSMN3R0-30YLD
PSMN3R0-30YLD Thermal model PSMN3R0-30YLD
Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads PHPT61003PY
LFPAK56; Reel pack; SMD, 7" Q1/T1 standard product orientation Orderable part number ending ,115 or... PHPT61003PY
PSMN9R5-30YLC