PSMN4R2-30MLD: N沟道30 V,4.2 mΩ逻辑电平MOSFET,采用LFPAK33封装,使用NextPowerS3技术

逻辑电平栅极驱动N沟道增强型MOSFET,采用LFPAK33封装。NextPowerS3产品组合利用恩智浦特有的“SchottkyPlus”技术,提供高频率低峰值性能,通常只有集成肖特基或类肖特基二极管的MOSFET才具有这种性能,并且没有令人烦恼的高漏电流问题。NextPowerS3特别适合于高开关频率下的高效应用。

sot1210_3d
数据手册 (1)
名称/描述Modified Date
N-channel 30 V, 4.2 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology (REV 1.2) PDF (277.0 kB) PSMN4R2-30MLD [English]11 Aug 2015
应用说明 (6)
名称/描述Modified Date
Using power MOSFETs in parallel (REV 1.0) PDF (184.0 kB) AN11599 [English]13 Jul 2016
LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.6 MB) AN11113_ZH [English]22 May 2014
Using RC Thermal Models (REV 2.0) PDF (1.0 MB) AN11261 [English]19 May 2014
LFPAK MOSFET thermal design guide, Chinese version (REV 1.0) PDF (515.0 kB) AN10874_ZH [English]14 Sep 2012
LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.5 MB) AN11113 [English]16 Nov 2011
LFPAK MOSFET thermal design guide (REV 2.0) PDF (401.0 kB) AN10874 [English]27 Jan 2011
手册 (1)
名称/描述Modified Date
Ultra-reliable LFPAK56 and LFPAK33 (REV 1.0) PDF (4.4 MB) 75017659 [English]18 May 2015
选型工具指南 (2)
名称/描述Modified Date
Discretes Semiconductors Selection Guide 2016 (REV 1.0) PDF (47.9 MB) 75017631 [English]17 Feb 2016
NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler (REV 1.0) PDF (6.2 MB) 75017590 [English]11 Sep 2014
封装信息 (1)
名称/描述Modified Date
Plastic single ended surface mounted package (LFPAK33); 8 leads (REV 1.1) PDF (255.0 kB) SOT1210 [English]18 Oct 2016
包装 (1)
名称/描述Modified Date
LFPAK33; Reel pack, SMD, 7' Q1/T1 Standard product orientation Orderable part number ending, 115 or... (REV 1.0) PDF (222.0 kB) SOT1210_115 [English]31 Mar 2014
支持信息 (1)
名称/描述Modified Date
Power MOSFET frequently asked questions and answers (REV 1.0) PDF (1.1 MB) TN00008 [English]07 Aug 2015
SPICE
Thermal design
Thermal model
订购信息
型号状态Package versionPackage nameChannel typeNumber of transistorsVDS [max] (V)RDSon [max] @ VGS = 10 V (mΩ)RDSon [max] @ VGS = 5 V (mΩ)RDSon [max] @ VGS = 4.5 V (mΩ)RDSon [max] @ VGS = 2.5 V (mΩ)QGD [typ] (nC)Tj [max] (°C)QG(tot) [typ] (nC)ID [max] (A)QG(tot) [typ] @ VGS = 4.5 V (nC)Qr [typ] (nC)VGSth [typ] (V)Ptot [max] (W)QG(tot) [typ] @ VGS = 10 V (nC)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)日期
PSMN4R2-30MLDActiveSOT1210LFPAK33N1304.35.73.11759.2709.2151.76519.6N11978482013-09-06
封装环保信息
产品编号封装说明Outline Version回流/波峰焊接包装产品状态部件编号订购码 (12NC)Marking化学成分RoHS / 无铅 / RHFMSLMSL LF
PSMN4R2-30MLDSOT1210Reel 7" Q1/T1ActivePSMN4R2-30MLDX (9340 679 71115)4D230LPSMN4R2-30MLD11
N-channel 30 V, 4.2 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology PSMN4R2-30MLD
Using power MOSFETs in parallel BUK7M12-60E
LFPAK MOSFET thermal design guide - Part 2 BUK7K8R7-40E
Using RC Thermal Models BUK7M12-60E
LFPAK MOSFET thermal design guide, Chinese version BUK7K8R7-40E
LFPAK MOSFET thermal design guide - Part 2 BUK7M12-60E
LFPAK MOSFET thermal design guide BUK7M12-60E
Ultra-reliable LFPAK56 and LFPAK33 BUK7M12-60E
Discretes Semiconductors Selection Guide 2016 BUK7M12-60E
NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler BSS84AKW
Power MOSFET frequently asked questions and answers BUK7M12-60E
PSMN4R2-30MLD Spice model PSMN4R2-30MLD
PSMN4R2-30MLD Thermal design model PSMN4R2-30MLD
PSMN4R2-30MLD Thermal model PSMN4R2-30MLD
Plastic single ended surface mounted package (LFPAK33); 8 leads BUK7M12-60E
LFPAK33; Reel pack, SMD, 7' Q1/T1 Standard product orientation Orderable part number ending, 115 or... BUK7M12-60E
PSMN9R8-30MLC