PSMN4R8-100PSE: N沟道100 V 5 mΩ标准电平MOSFET,带改进的SOA,采用TO220封装

带改进SOA的标准电平N沟道MOSFET,采用TO220封装。作为恩智浦“NextPower Live”产品组合的一部分,PSMN4R8-100PSE的耐用程度足以承受开关期间的大量浪涌电流和故障电流,同时提供低RDS(on)特性,可在持续使用期间保持低温高效。非常适合基于48 V背板/供电轨的通信系统。

SOT078
数据手册 (1)
名称/描述Modified Date
N-channel 100 V 5 mΩ standard level MOSFET with improved SOA in TO220 package (REV 1.0) PDF (255.0 kB) PSMN4R8-100PSE [English]11 Jul 2014
应用说明 (8)
名称/描述Modified Date
Using power MOSFETs in parallel (REV 1.0) PDF (184.0 kB) AN11599 [English]13 Jul 2016
Power MOSFET single-shot and repetitive avalanche ruggedness rating (REV 3.0) PDF (146.0 kB) AN10273 [English]10 Dec 2015
LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.6 MB) AN11113_ZH [English]22 May 2014
Using RC Thermal Models (REV 2.0) PDF (1.0 MB) AN11261 [English]19 May 2014
Failure signature of Electrical Overstress on Power MOSFETs (REV 1.0) PDF (10.5 MB) AN11243 [English]29 Oct 2012
LFPAK MOSFET thermal design guide, Chinese version (REV 1.0) PDF (515.0 kB) AN10874_ZH [English]14 Sep 2012
LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.5 MB) AN11113 [English]16 Nov 2011
LFPAK MOSFET thermal design guide (REV 2.0) PDF (401.0 kB) AN10874 [English]27 Jan 2011
手册 (1)
名称/描述Modified Date
Ultra-reliable LFPAK56 and LFPAK33 (REV 1.0) PDF (4.4 MB) 75017659 [English]18 May 2015
选型工具指南 (2)
名称/描述Modified Date
Discretes Semiconductors Selection Guide 2016 (REV 1.0) PDF (47.9 MB) 75017631 [English]17 Feb 2016
NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler (REV 1.0) PDF (6.2 MB) 75017590 [English]11 Sep 2014
封装信息 (1)
名称/描述Modified Date
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB (REV 1.0) PDF (189.0 kB) SOT78 [English]08 Feb 2016
包装 (1)
名称/描述Modified Date
Tube pack; standard product orientation; 12NC ending 127 (REV 1.0) PDF (119.0 kB) SOT78_127 [English]22 Nov 2012
支持信息 (1)
名称/描述Modified Date
Power MOSFET frequently asked questions and answers (REV 1.0) PDF (1.1 MB) TN00008 [English]07 Aug 2015
SPICE
Thermal design
Thermal model
订购信息
型号状态Package versionPackage nameChannel typeNumber of transistorsVDS [max] (V)RDSon [max] @ VGS = 5 V (mΩ)RDSon [max] @ VGS = 10 V (mΩ)RDSon [max] @ VGS = 4.5 V (mΩ)RDSon [max] @ VGS = 2.5 V (mΩ)QGD [typ] (nC)Tj [max] (°C)ID [max] (A)QG(tot) [typ] (nC)QG(tot) [typ] @ VGS = 4.5 V (nC)Qr [typ] (nC)VGSth [typ] (V)Ptot [max] (W)QG(tot) [typ] @ VGS = 10 V (nC)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)日期
PSMN4R8-100PSEActiveSOT78TO-220ABN11005591751201962273405196N106656742014-05-16
封装环保信息
产品编号封装说明Outline Version回流/波峰焊接包装产品状态部件编号订购码 (12NC)Marking化学成分RoHS / 无铅 / RHFMSLMSL LF
PSMN4R8-100PSESOT78Horizontal, Rail PackActivePSMN4R8-100PSEQ (9340 686 33127)PSMN4R8-100PSEPSMN4R8-100PSENANA
N-channel 100 V 5 mΩ standard level MOSFET with improved SOA in TO220 package PSMN4R8-100PSE
Using power MOSFETs in parallel BUK7M12-60E
Power MOSFET single-shot and repetitive avalanche ruggedness rating BUK7M12-60E
LFPAK MOSFET thermal design guide - Part 2 BUK7K8R7-40E
Using RC Thermal Models BUK7M12-60E
Failure signature of Electrical Overstress on Power MOSFETs BUK7M12-60E
LFPAK MOSFET thermal design guide, Chinese version BUK7K8R7-40E
LFPAK MOSFET thermal design guide - Part 2 BUK7M12-60E
LFPAK MOSFET thermal design guide BUK7M12-60E
Ultra-reliable LFPAK56 and LFPAK33 BUK7M12-60E
Discretes Semiconductors Selection Guide 2016 BUK7M12-60E
NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler BSS84AKW
Power MOSFET frequently asked questions and answers BUK7M12-60E
PSMN4R8-100PSE SPICE model PSMN4R8-100PSE
PSMN4R8-100PSE Thermal design model PSMN4R8-100PSE
PSMN4R8-100PSE Thermal model PSMN4R8-100PSE
SOT78 PSMN9R5-100PS
Horizontal, Rail Pack PSMN9R5-100PS
TOPT12-800C0