数据手册DataSheet 下载PSMN5R0-100XS N沟道100 V 5 mΩ标准电平MOSFET,采用TO220F (SOT186A)封装.pdf

标准电平N沟道MOSFET,采用TO220F (SOT186A)封装,额定工作温度为175C。该产品设计适用于各种工业、通信及家用设备。

产品特点
  • 低开关和导通损耗,因而效率高
  • TO220封装
  • 适用于标准电平栅极驱动
产品应用
  • AC-DC供电设备
  • 马达控制
  • 服务器电源
  • 同步整流
订购型号
订购型号封装Outline versionReflow-/Wave soldering包装产品状态标示订购器件的编号
PSMN5R0-100XSTO-220F (SOT186A)sot186a_poHorizontal, Rail Pack激活PSMN5R0-100XSPSMN5R0-100XS,127( 9340 660 39127 )
品质、可靠性及RoHS化学成分
订购型号订购器件的编号RoHS / RHF无铅开始日期EFRIFR (FIT)MTBF(小时)潮湿敏感度等级MSL LF
PSMN5R0-100XSPSMN5R0-100XS,127NANA
产品技术资料
文档标题类型分类格式更新日期
PSMN5R0-100XS (中文):N-channel 100V 5 mOhm standard level MOSFET in TO220F (SOT186A)Data sheetpdf2012-07-03
AN10273:Power MOSFET single-shot and repetitive avalanche ruggedness ratingApplication notepdf2010-03-17
AN11158:Understanding power MOSFET data sheet parametersApplication notepdf2014-02-04
AN11160:Designing RC SnubbersApplication notepdf2012-10-01
AN11156:Using Power MOSFET Zth CurvesApplication notepdf2012-10-10
AN11243:Failure signature of Electrical Overstress on Power MOSFETsApplication notepdf2012-10-29
AN11158_ZH:Understanding power MOSFET data sheet parametersApplication notepdf2013-11-08
PSMN5R0-100XS:PSMN5R0-100XS Spice modelSPICE modellib2012-06-15
sot186a_po:plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 "full pack"Outline drawingpdf2009-10-08
N-channel 100V 5 mOhm standard level MOSFET in TO220F (SOT186A) PSMN5R0-100XS
Power MOSFET single-shot and repetitive avalanche ruggedness rating BUK7M12-60E
Understanding power MOSFET data sheet parameters BUK7M12-60E
Designing RC Snubbers BUK7M12-60E
Using Power MOSFET Zth Curves BUK7M12-60E
Failure signature of Electrical Overstress on Power MOSFETs BUK7M12-60E
Understanding power MOSFET data sheet parameters BUK7K6R8-40E
PSMN5R0-100XS Spice model PSMN5R0-100XS
plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 "full pack" TYN20X-800T