PSMN7R0-100ES: N沟道100 V 6.8 mΩ标准电平MOSFET,采用I2PAK封装。

标准电平N沟道MOSFET,采用I2PAK封装,额定工作温度为175C。该产品设计适用于各种工业、通信及家用设备。

SOT226
数据手册 (1)
名称/描述Modified Date
N-channel 100V 6.8 mΩ standard level MOSFET in I2PAK. (REV 3.0) PDF (242.0 kB) PSMN7R0-100ES [English]23 Feb 2010
应用说明 (12)
名称/描述Modified Date
Using power MOSFETs in parallel (REV 1.0) PDF (184.0 kB) AN11599 [English]13 Jul 2016
Power MOSFET single-shot and repetitive avalanche ruggedness rating (REV 3.0) PDF (146.0 kB) AN10273 [English]10 Dec 2015
LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.6 MB) AN11113_ZH [English]22 May 2014
Using RC Thermal Models (REV 2.0) PDF (1.0 MB) AN11261 [English]19 May 2014
Understanding power MOSFET data sheet parameters (REV 4.0) PDF (571.0 kB) AN11158 [English]04 Feb 2014
Understanding power MOSFET data sheet parameters (REV 3.0) PDF (903.0 kB) AN11158_ZH [English]08 Nov 2013
Failure signature of Electrical Overstress on Power MOSFETs (REV 1.0) PDF (10.5 MB) AN11243 [English]29 Oct 2012
Using Power MOSFET Zth Curves (REV 1.0) PDF (212.0 kB) AN11156 [English]10 Oct 2012
Designing RC Snubbers (REV 1.0) PDF (565.0 kB) AN11160 [English]01 Oct 2012
LFPAK MOSFET thermal design guide, Chinese version (REV 1.0) PDF (515.0 kB) AN10874_ZH [English]14 Sep 2012
LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.5 MB) AN11113 [English]16 Nov 2011
LFPAK MOSFET thermal design guide (REV 2.0) PDF (401.0 kB) AN10874 [English]27 Jan 2011
手册 (1)
名称/描述Modified Date
Ultra-reliable LFPAK56 and LFPAK33 (REV 1.0) PDF (4.4 MB) 75017659 [English]18 May 2015
选型工具指南 (2)
名称/描述Modified Date
Discretes Semiconductors Selection Guide 2016 (REV 1.0) PDF (47.9 MB) 75017631 [English]17 Feb 2016
NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler (REV 1.0) PDF (6.2 MB) 75017590 [English]11 Sep 2014
封装信息 (1)
名称/描述Modified Date
plastic single-ended package (I2PAK); TO-262 (REV 1.0) PDF (173.0 kB) SOT226 [English]08 Feb 2016
支持信息 (1)
名称/描述Modified Date
Power MOSFET frequently asked questions and answers (REV 1.0) PDF (1.1 MB) TN00008 [English]07 Aug 2015
SPICE
Thermal model
订购信息
型号状态Package versionPackage nameChannel typeNumber of transistorsVDS [max] (V)RDSon [max] @ VGS = 10 V (mΩ)RDSon [max] @ VGS = 5 V (mΩ)RDSon [max] @ VGS = 4.5 V (mΩ)RDSon [max] @ VGS = 2.5 V (mΩ)QGD [typ] (nC)Tj [max] (°C)QG(tot) [typ] (nC)ID [max] (A)Qr [typ] (nC)QG(tot) [typ] @ VGS = 4.5 V (nC)VGSth [typ] (V)QG(tot) [typ] @ VGS = 10 V (nC)Ptot [max] (W)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)日期
PSMN7R0-100ESActiveSOT226I2PAKN11006.8361751251001673125269N66864382010-09-02
封装环保信息
产品编号封装说明Outline Version回流/波峰焊接包装产品状态部件编号订购码 (12NC)Marking化学成分RoHS / 无铅 / RHFMSLMSL LF
PSMN7R0-100ESSOT226Horizontal, Rail PackActivePSMN7R0-100ES,127 (9340 642 92127)PSMN7R0-100ESPSMN7R0-100ESNANA
N-channel 100V 6.8 mΩ standard level MOSFET in I2PAK. PSMN7R0-100ES
Using power MOSFETs in parallel BUK7M12-60E
Power MOSFET single-shot and repetitive avalanche ruggedness rating BUK7M12-60E
LFPAK MOSFET thermal design guide - Part 2 BUK7K8R7-40E
Using RC Thermal Models BUK7M12-60E
Understanding power MOSFET data sheet parameters BUK7M12-60E
Understanding power MOSFET data sheet parameters BUK7K6R8-40E
Failure signature of Electrical Overstress on Power MOSFETs BUK7M12-60E
Using Power MOSFET Zth Curves BUK7M12-60E
Designing RC Snubbers BUK7M12-60E
LFPAK MOSFET thermal design guide, Chinese version BUK7K8R7-40E
LFPAK MOSFET thermal design guide - Part 2 BUK7M12-60E
LFPAK MOSFET thermal design guide BUK7M12-60E
Ultra-reliable LFPAK56 and LFPAK33 BUK7M12-60E
Discretes Semiconductors Selection Guide 2016 BUK7M12-60E
NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler BSS84AKW
Power MOSFET frequently asked questions and answers BUK7M12-60E
PSMN7R0-100ES Spice model PSMN7R0-100ES
PSMN7R0-100ES Thermal model PSMN7R0-100ES
plastic single-ended package (I2PAK); TO-262 BUK7E8R3-40E
PSMN8R5-100ES