2N6042: 8.0 A, 100 V PNP Darlington Bipolar Power Transistor

The 8 A, 100 V NPN Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low-speed switching applications. 2N6040, 2N6042 (PNP); and 2N6043, 2N6045 (NPN) are complementary devices.

特性
  • High DC Current Gain -hFE = 2500 (Typ) @ IC = 4.0 Adc
  • Collector-Emitter Sustaining Voltage - @ 100 mAdc -VCEO(sus) = 60 Vdc (Min) - 2N6040, 2N6043VCEO(sus)= 80 Vdc (Min) - 2N6041, 2N6044VCEO(sus)= 100 Vdc (Min) - 2N6042, 2N6045
  • Low Collector-Emitter Saturation Voltage -VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc - 2N6040,41, 2N6043,44VCE(sat)= 2.0 Vdc (Max) @ IC = 3.0 Adc - 2N6042, 2N6045
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistors
  • Pb-Free Packages are Available
封装
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice Model2N6042.LIB (1.0kB)0
Saber Model2N6042.SIN (1.0kB)0
Spice2 Model2N6042.SP2 (1.0kB)0
Spice3 Model2N6042.SP3 (1.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
TO-220 3 LEAD STANDARD221A-09 (30.9kB)AH
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Plastic Medium-Power Complementary Silicon Transistors2N6040/D (146kB)10Nov, 2014
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
2N6042GActivePb-freeTO-220-3221A-09NATube50$0.4
订购产品技术参数
ProductPolarityIC Continuous (A)V(BR)CEO Min (V)VCE(sat) Max (V)hFE Min (k)hFE Max (k)fT Min (MHz)
2N6042GPNP810021204
Plastic Medium-Power Complementary Silicon Transistors (146kB) 2N6045
PSpice Model 2N6042
Saber Model 2N6042
Spice2 Model 2N6042
Spice3 Model 2N6042
TO-220 3 LEAD STANDARD NTP6412AN