2N6388: 10 A, 80 V NPN Darlington Bipolar Power Transistor
The Power 8A 80 V NPN Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications.
特性- High DC Current Gain -hFE=2500 (Typ) @Ic=4.0 Adc
- Collector-Emitter Sustaining Voltage - @ 100 mAdcVceo(sus) = 60 Vdc (Min) - 2N6387Vceo (sus) = 80 Vdc (Min) - 2N6388
- Collector-Emitter Sustaining Voltage - @ 100 mAdcVceo(sus) = 60 Vdc (Min) - 2N6387Vceo (sus) = 80 Vdc (Min) - 2N6388
- Low Collector-Emitter Saturation Voltage-Vce(sat) = 2.0 Vdc (Max) @ Ic=5.0 Adc
- Monolithic Construction with Built-In Base-Emitter Shunt Resistors
- T0-220AB Compact Package
- Epoxy meets UL94, VO @ 1/8 inch
- ESD Ratings Machine Model C and Human Body Model 3B
- Pb-Free Packages are Available
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封装
仿真模型 (8)
封装图纸 (1)
数据表 (1)
产品订购型号
产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价) |
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2N6387G | Active | Pb-free | TO-220-3 | 221A-09 | NA | Tube | 50 | $0.48 |
2N6388G | Active | Pb-free | TO-220-3 | 221A-09 | NA | Tube | 50 | $0.48 |
2N6387 | Last Shipments | | TO-220-3 | 221A-09 | NA | Tube | 50 | |
2N6388 | Last Shipments | | TO-220-3 | 221A-09 | NA | Tube | 50 | |
订购产品技术参数
Product | Polarity | IC Continuous (A) | V(BR)CEO Min (V) | VCE(sat) Max (V) | hFE Min (k) | hFE Max (k) | fT Min (MHz) |
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2N6387G | NPN | 10 | 60 | 2 | 1 | 20 | 20 |
2N6388G | NPN | 10 | 80 | 2 | 1 | 20 | 20 |