BC857BDW1: Dual PNP Bipolar Transistor
The Dual PNP Bipolar Transistor is designed for general purpose amplifier applications. It is housed in the SOT-363/SC-88, which is designed for low power surface mount applications.
特性- Device Marking:BC856BDW1T1 = 3BBC857BDW1T1 = 3FBC857CDW1T1 = 3GBC858BDW1T1 = 3KBC858CDW1T1 = 3L
- Pb-Free Packages are Available
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
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封装
仿真模型 (4)
封装图纸 (1)
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| BC857BDW1T1G | Active | AEC Qualified
Pb-free
Halide free | SC-88-6 / SC-70-6 / SOT-363-6 | 419B-02 | 1 | Tape and Reel | 3000 | $0.0443 |
| SBC857BDW1T1G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | SC-88-6 / SC-70-6 / SOT-363-6 | 419B-02 | 1 | Tape and Reel | 3000 | $0.0513 |
| BC857BDW1T1 | Last Shipments | | SC-88-6 / SC-70-6 / SOT-363-6 | 419B-02 | 1 | Tape and Reel | 3000 | |
订购产品技术参数
| Product | Polarity | Type | VCE(sat) Max (V) | IC Continuous (A) | V(BR)CEO Min (V) | hFE Min | hFE Max | fT Min (MHz) | PTM Max (W) |
|---|
| BC857BDW1T1G | Dual PNP | General Purpose | 0.3 | 0.1 | 45 | 220 | 475 | 100 | 0.38 |
| SBC857BDW1T1G | Dual PNP | General Purpose | 0.3 | 0.1 | 45 | 220 | 475 | 100 | 0.38 |
