ESD7551: ESD Protection, Micro−Packaged Diodes
The ESD7551 is designed to protect voltage sensitive components that require ultra−low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Because of its low capacitance, the part is well suited for use in high frequency designs such as USB 2.0 high speed and antenna line applications.
特性- Ultra−Low Capacitance (0.35 pF Max)
- Low Clamping Voltage
- Stand−off Voltage: 3.3 V
- Low Leakage
- Response Time is < 1 ns
- Low Dynamic Resistance < 1 ?
- IEC61000−4−2 Level 4 ESD Protection
- SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
|
应用- RF Signal ESD Protection
- RF Switching, PA, and Antenna ESD Protection
- Near Field Communications
|
数据表 (1)
封装图纸 (1)
产品订购型号
产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价) |
---|
ESD7551N2T5G | Active | AEC Qualified
Pb-free
Halide free | X2DFN-2 | 714AB | 1 | Tape and Reel | 8000 | $0.044 |
SZESD7551N2T5G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | X2DFN-2 | 714AB | 1 | Tape and Reel | 8000 | $0.0484 |
订购产品技术参数
Product | Interface | Number of Lines | Direction | C Max (pF) | V(BR) Min (V) | VRWM Max (V) | IR Max (µA) | PPK Max (W) |
---|
ESD7551N2T5G | General I/O | 1 | Bidirectional | 0.35 | 5 | 3.3 | 0.05 | 0.25 |
SZESD7551N2T5G | General I/O | 1 | Bidirectional | 0.35 | 5 | 3.3 | 0.05 | 0.25 |